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High-power 1.3 µm superluminescent diode

Kwong, Norman S. K. and Bar-Chaim, Nadav and Chen, Tirong (1989) High-power 1.3 µm superluminescent diode. Applied Physics Letters, 54 (4). pp. 298-300. ISSN 0003-6951. doi:10.1063/1.100992.

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Superluminescent diodes with high output power (10 mW at 175 mA), wide spectral width (28 nm), low spectral modulation depth (<15%), wide frequency modulation bandwidth (570 MHz), and high single-mode fiber coupling efficiency (40%) are reported. The structure is based on a buried crescent laser structure with an antireflection coating and a "short-circuit" absorber to suppress lasing.

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Additional Information:© 1989 American Institute of Physics. Received 27 September 1988; accepted 15 November 1988. One of the authors, Tirong Chen, would like to acknowledge the support by the Office of Naval Research and National Science Foundation.
Issue or Number:4
Record Number:CaltechAUTHORS:KWOapl89
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10177
Deposited By: Tony Diaz
Deposited On:16 Apr 2008
Last Modified:13 Apr 2022 17:13

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