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Vertical field-effect transistors in III-V semiconductors

Rav-Noy, Z. and Lu, L-T. and Kapon, E. and Mukai, S. and Margalit, S. and Yariv, A. (1984) Vertical field-effect transistors in III-V semiconductors. Applied Physics Letters, 45 (3). pp. 258-260. ISSN 0003-6951. doi:10.1063/1.95204. https://resolver.caltech.edu/CaltechAUTHORS:RAVapl84

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Abstract

Vertical metal-semiconductor field-effect transistors in GaAs/GaAlAs and vertical metal-oxide-semiconductor field-effect transistors (MOSFET's) in InP/GaInPAs materials have been fabricated. These structures make possible short channel devices with gate lengths defined by epitaxy rather than by submicron photolithography processes. Devices with transconductances as high as 280 mS/mm in GaAs and 60 mS/mm (with 100-nm gate oxide) for the InP/GaInPAs MOSFET's were observed.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1063/1.95204DOIUNSPECIFIED
Additional Information:Copyright © 1984 American Institute of Physics. Received 9 April 1984; accepted 8 May 1984. This work was supported by the Office of Naval Research, the Air Force Office of Scientific Research, and the Defense Advanced Projects Agency. Z. Rav-Noy would like to acknowledge the support of the Bantrell Fellowship.
Subject Keywords:FIELD EFFECT TRANSISTORS, III−V SEMICONDUCTORS, MOSFET, GATES, FABRICATION, EPITAXY, LITHOGRAPHY, GALLIUM ARSENIDES, INDIUM ARSENIDES, MESFET
Issue or Number:3
DOI:10.1063/1.95204
Record Number:CaltechAUTHORS:RAVapl84
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:RAVapl84
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10179
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:16 Apr 2008
Last Modified:08 Nov 2021 21:05

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