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Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater

Bar-Chaim, N. and Lau, K. Y. and Ury, I. and Yariv, A. (1984) Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater. In: Optical Interfaces for Digital Circuits & Systems. Proceedings of SPIE. No.466. Society of Photo-optical Instrumentation Engineers (SPIE) , Bellingham, WA, pp. 65-68. ISBN 0892525010.

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A low threshold buried heterostructure laser, a metal-semiconductor field effect transistor (MESFET), and a photodiode, have for the first time, been monolithically integrated on a semi-insulating GaAs substrate. This integrated optoelectronic circuit (IOEC) was operated as a rudimentary optical repeater. The incident optical signal is detected by the photodiode, amplified by the MESFET, and converted back to light by the laser. The gain bandwidth product of the repeater was measured to be 178 MHz.

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Additional Information:© 1984) Society of Photo-Optical Instrumentation Engineers (SPIE). This work was supported by the Defense Advanced Research Project Agency and the Naval Research Laboratory.
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Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Naval Research LaboratoryUNSPECIFIED
Series Name:Proceedings of SPIE
Issue or Number:466
Record Number:CaltechAUTHORS:20200311-161942053
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Official Citation:N Bar-Chaim, K Y Lau, I Ury, and A. Yariv "Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater", Proc. SPIE 0466, Optical Interfaces for Digital Circuits & Systems, (10 May 1984);
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:101881
Deposited By: George Porter
Deposited On:16 Mar 2020 17:56
Last Modified:16 Nov 2021 18:06

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