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X-ray rocking curve study of Si-implanted GaAs, Si, and Ge

Speriosu, V. S. and Paine, B. M. and Nicolet, M-A. and Glass, H. L. (1982) X-ray rocking curve study of Si-implanted GaAs, Si, and Ge. Applied Physics Letters, 40 (7). pp. 604-606. ISSN 0003-6951. doi:10.1063/1.93195.

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Crystalline properties of Si-implanted <100> GaAs, Si, and Ge have been studied by Bragg case double-crystal x-ray diffraction. Sharp qualitative and quantitative differences were found between the damage in GaAs on one hand and Si and Ge on the other. In Si and Ge the number of defects and the strain increase linearly with dose up to the amorphous threshold. In GaAs the increase in these quantities is neither linear nor monotonic with dose. At a moderate damage level the GaAs crystal undergoes a transition from elastic to plastic behavior. This transition is accompanied by the creation of extended defects, which are not detected in Si or Ge.

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Additional Information:© 1982 American Institute of Physics. Received 6 November 1981; accepted for publication 8 January 1982. We thank E. Babcock for performing the ion implantation, S.S. Lau for helpful discussions, and L.A. Moudy for technical assistance. This work was supported in part by the Advanced Research Agency of the Department of Defense and was monitored by the Air Force Office of Scientific Research under Contract No. 49620-TI-C-0087.
Issue or Number:7
Record Number:CaltechAUTHORS:SPEapl82
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10191
Deposited By: Tony Diaz
Deposited On:16 Apr 2008
Last Modified:08 Nov 2021 21:05

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