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Depth profiles of perpendicular and parallel strain in a GaAsxP1−x/GaP superlattice

Speriosu, V. S. and Nicolet, M.-A. and Picraux, S. T. and Biefeld, R. M. (1984) Depth profiles of perpendicular and parallel strain in a GaAsxP1−x/GaP superlattice. Applied Physics Letters, 45 (3). pp. 223-225. ISSN 0003-6951. doi:10.1063/1.95190.

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Using double-crystal x-ray rocking curves, depth profiles of parallel and perpendicular strain were obtained in a GaAs0.14P0.86/GaP superlattice grown on a buffer layer on (100) GaP. Combining symmetric Fe Kα1 (400) and asymmetric Cu Kα1 (422) reflections, a constant parallel strain of 0.19% relative to the substrate was found throughout the superlattice and buffer layer. Relative to the substrate, the perpendicular strain was found to be 0.26% in the buffer, and 0.80% and −0.19% in the 176-Å-thick superlattice GaAsxP1−x and GaP layers, respectively. The strain profiles indicate the buffer is ~80% decoupled from the substrate by misfit dislocations near the buffer/substrate interface, and the lattice misfit in the superlattice is elastically accommodated by the epitaxial structure with a small shift in the average lattice constant relative to the equilibrium superlattice structure.

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Additional Information:© 1984 American Institute of Physics. Received 6 March 1984; accepted 18 May 1984. The work of the Caltech group was supported by the Defense Advanced Research Projects Agency (MDA 903-82-C-0348) (S. Roosild) and the work of the Sandia National Laboratories group was supported by the U.S. Department of Energy under contract number DE-AC04-76DP00789.
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10192
Deposited By: Tony Diaz
Deposited On:16 Apr 2008
Last Modified:08 Nov 2021 21:05

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