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Germanium nanowires: from synthesis, surface chemistry, and assembly to devices

Wang, D. and Dai, H. (2006) Germanium nanowires: from synthesis, surface chemistry, and assembly to devices. Applied Physics A: Materials Science and Processing, 85 (3). pp. 217-225. ISSN 0947-8396. https://resolver.caltech.edu/CaltechAUTHORS:20200320-073609200

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Abstract

A low temperature synthesis of single crystalline Ge nanowires via chemical vapor deposition is enabled by balancing the feedstock and its diffusion in growth seeds. Understanding and optimizing the synthetic chemistry leads to deterministic nanowire growth at well-defined locations and bulk quantity production of homogeneous nanowires, both of which greatly facilitate the assembly toward parallel nanowire arrays. Surface chemistry studies reveal that p- and n-type Ge nanowires undergo different oxidation routes and the surface oxide induced states cause opposite band bending for nanowires with different doping. Furthermore, long chain alkanethiols form a dense and uniform protection layer on Ge nanowire surfaces and therefore afford excellent oxidation resistance. Finally, high performance field effect transistors are constructed on Ge nanowires with both thermally grown SiO₂ and atomic layer deposited HfO₂ as gate dielectrics.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1007/s00339-006-3704-zDOIArticle
https://rdcu.be/b286HPublisherFree ReadCube access
Additional Information:© 2006 Springer. Received 15 April 2006; Accepted 08 July 2006; Published 23 September 2006. This work was supported by the MARCO MSD Focus Center, Stanford INMP, a DARPA 3D program, SRC/AMD, the Packard Foundation, and the Sloan Foundation.
Funders:
Funding AgencyGrant Number
Microelectronics Advanced Research Corporation (MARCO)UNSPECIFIED
Stanford UniversityUNSPECIFIED
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Semiconductor Research CorporationUNSPECIFIED
David and Lucile Packard FoundationUNSPECIFIED
Alfred P. Sloan FoundationUNSPECIFIED
Subject Keywords:Atomic Layer Deposition; Gate Dielectric; Vapor Liquid Solid; Chemical Vapor Deposition Growth; Vapor Liquid Solid Growth
Issue or Number:3
Classification Code:PSCS: 73.63.-b; 73.63.B6; 73.22.-f; 73.20.At; 73.90.+f
Record Number:CaltechAUTHORS:20200320-073609200
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20200320-073609200
Official Citation:Wang, D., Dai, H. Germanium nanowires: from synthesis, surface chemistry, and assembly to devices. Appl. Phys. A 85, 217–225 (2006). https://doi.org/10.1007/s00339-006-3704-z
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:102011
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:20 Mar 2020 16:09
Last Modified:20 Nov 2020 22:54

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