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DC responsivity of proximity effect bridges to high frequency radiation

Hauser, M. G. and Palmer, D. W. (1974) DC responsivity of proximity effect bridges to high frequency radiation. Revue de Physique Appliquée, 9 (1). pp. 53-60. ISSN 0035-1687. doi:10.1051/rphysap:019740090105300.

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The effect of microwave radiation on the dc current-voltage characteristic of proximity effect bridges has been studied at frequencies of 10, 35 and 90 GHz. We report the properties of bridges fabricated in layered films of Nb and Ta. The fraction ε of the incident radiant power absorbed by the bridge is measured calorimetrically, permitting determination of the intrinsic responsivity (volts per watt of power absorbed when operated in a current-biased mode). In our test geometry ε is typically ˜ 10⁻⁴ for a 0.1 Ω Nb-Ta bridge, and increases roughly linearly with dc junction resistance R. Broad-band responsivitv is generally independent of incident power. increases with increasing critical current Ic (decreasing temperature), and decreases with increasing frequency, varying approximately as Ω-3 where Ω is the normalized frequency ħω/2 eRIc. Peak responsivities achieved to date are ˜ 105 V/W (absorbed) at 10 GHz and ˜ 102 V/W (absorbed) at 90 GHz. By mounting junctions in vacuum and exposing them to near-infrared radiation, we have found that their purely bolometric (thermal) response is much weaker than the microwave response at 90 GHz.

Item Type:Article
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Additional Information:© 1974 EDP Sciences.
Subject Keywords:Radiation detectors -- Microwave -- IV characteristic -- Superconducting junctions -- Proximity effect (superconductivity) -- Multilayers -- Response functions -- Physical radiation effects -- Josephson effect -- Critical current -- Frequency dependence -- Temperature effect -- Bridge circuits
Issue or Number:1
Classification Code:PACS: 8525P; 0757K
Record Number:CaltechAUTHORS:20200323-134538646
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Official Citation:dc responsivity of proximity effect bridges to high frequency radiation. M. G. Hauser et D.W. Palmer. Rev. Phys. Appl. (Paris), 9 1 (1974) 53-60; DOI:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:102056
Deposited By: Tony Diaz
Deposited On:23 Mar 2020 23:19
Last Modified:16 Nov 2021 18:08

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