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Annealing behavior of neon-implanted magnetic garnet

Awano, H. and Speriosu, V. S. and Wilts, C. H. (1984) Annealing behavior of neon-implanted magnetic garnet. Journal of Applied Physics, 55 (8). pp. 3043-3048. ISSN 0021-8979. doi:10.1063/1.333297.

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Ferromagnetic resonance spectra and x-ray rocking curves were used to measure the change in magnetic properties and strain with annealing temperature in the surface layer of (111)-oriented Gd, Tm, Ga substituted yttrium iron garnet films implanted with Ne+ at 190 keV. For doses below about 4×10^14 ions/cm^2, the entire implanted layer remains crystalline and magnetic. The implantation-induced strain decreases monotonically with increasing annealing temperature, falling to zero at a temperature of 1100 °C. The implantation-induced magnetic anisotropy varies with strain in the same manner as for unannealed material until the annealing temperature reaches 800 °C. For higher temperatures, the anisotropy has a value larger than that expected for unannealed material. At a higher dose, 5×10^14 ions/cm^2, the center of the implanted region is both amorphous and nonferrimagnetic. Single-crystal order and ferrimagnetism return with annealing near 500 °C. The magnetization and exchange constant decrease with increasing dose, and annealing at 1100 °C restores them to bulk values.

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Additional Information:© 1984 American Institute of Physics. Received 12 September 1983; accepted 22 November 1983. We thank the San Jose laboratory of IBM for providing the implanted garnet samples and encouraging this study, and also Rockwell International for providing access to a double-crystal diffractometer. A preliminary presentation of some of the experimental data in this paper was made at the 1983 International Magnetics Conference in Philadelphia, Pennsylvania.
Subject Keywords:strains, surface layers, ferromagnetic resonance, magnetic properties, magnetic anisotropy, ion implantation, annealing, ferrimagnetism, magnetization, amorphous state, yig, high temperature, very high temperature, neon ions, x radiation
Issue or Number:8
Record Number:CaltechAUTHORS:AWAjap84
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10207
Deposited By: Archive Administrator
Deposited On:16 Apr 2008
Last Modified:08 Nov 2021 21:06

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