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Chemical Vapor Deposition of Silicon Dioxide by Direct-Current Corona Discharges in Dry Air Containing Octamethylcyclotetrasiloxane Vapor: Measurement of the Deposition Rate

Chen, Junhong and Davidson, Jane H. (2004) Chemical Vapor Deposition of Silicon Dioxide by Direct-Current Corona Discharges in Dry Air Containing Octamethylcyclotetrasiloxane Vapor: Measurement of the Deposition Rate. Plasma Chemistry and Plasma Processing, 24 (2). pp. 169-188. ISSN 0272-4324. https://resolver.caltech.edu/CaltechAUTHORS:20200324-103234477

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Abstract

Experiments in a positive-polarity, wire/plate electrode establish the effects of the concentration of octamethylcyclotetrasiloxane (150–1100 ppm) and the operating current (0.5–2.55 μA/cm length of wire) on the rate of deposition of silicon dioxide on the high voltage wire. The wire is 100 μm radius tungsten and the wire-to-plate spacing is 1.5 cm. Analyses of the deposit with X-ray diffraction, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy show that it is amorphous silicon dioxide. The deposition rate increases linearly with increasing silicone concentration and corona current. For the concentrations of silicone likely to present in indoor air, the gas-phase processes limit the rate of deposition.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1023/b:pcpp.0000013197.77036.f5DOIArticle
https://rdcu.be/b3deLPublisherFree ReadCube access
Additional Information:© 2004 Plenum Publishing Corporation. Received January 10, 2003; revised August 8, 2003.
Subject Keywords:Corona plasma; corona-enhanced chemical vapor deposition (CECVD); octamethylcyclotetrasiloxane (OMCTS); electrostatic precipitator
Issue or Number:2
Record Number:CaltechAUTHORS:20200324-103234477
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20200324-103234477
Official Citation:Chen, J., Davidson, J.H. Chemical Vapor Deposition of Silicon Dioxide by Direct-Current Corona Discharges in Dry Air Containing Octamethylcyclotetrasiloxane Vapor: Measurement of the Deposition Rate. Plasma Chemistry and Plasma Processing 24, 169–188 (2004). https://doi.org/10.1023/B:PCPP.0000013197.77036.f5
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:102079
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:24 Mar 2020 18:30
Last Modified:24 Mar 2020 18:30

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