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Defect-Seeded Atomic Layer Deposition of Metal Oxides on the Basal Plane of 2D Layered Materials

Mazza, Michael F. and Cabán-Acevedo, Miguel and Wiensch, Joshua D. and Thompson, Annelise C. and Lewis, Nathan S. (2020) Defect-Seeded Atomic Layer Deposition of Metal Oxides on the Basal Plane of 2D Layered Materials. Nano Letters, 20 (4). pp. 2632-2638. ISSN 1530-6984. doi:10.1021/acs.nanolett.0c00179.

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Atomic layer deposition (ALD) on mechanically exfoliated 2D layered materials spontaneously produces network patterns of metal oxide nanoparticles in triangular and linear deposits on the basal surface. The network patterns formed under a range of ALD conditions and were independent of the orientation of the substrate in the ALD reactor. The patterns were produced on MoS2 or HOPG when either tetrakis(dimethylamido)titanium or bis(ethylcyclopentadienyl)manganese were used as precursors, suggesting that the phenomenon is general for 2D materials. Transmission electron microscopy revealed the presence, prior to deposition, of dislocation networks along the basal plane of mechanically exfoliated 2D flakes, indicating that periodical basal plane defects related to disruptions in the van der Waals stacking of layers, such as perfect line dislocations and triangular extended stacking faults networks, introduce a surface reactivity landscape that leads to the emergence of patterned deposition.

Item Type:Article
Related URLs:
URLURL TypeDescription
Wiensch, Joshua D.0000-0002-8235-6937
Thompson, Annelise C.0000-0003-2414-7050
Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 2020 American Chemical Society. Received: January 14, 2020; Revised: February 28, 2020; Published: March 25, 2020. M.C. acknowledges support from the Ford Foundation under the Postdoctoral Scholar Fellowship program. M.C. acknowledges support from the National Science Foundation CCI Solar Fuels Program under Grant No. CHE-1305124. M.F.M, J.D.W., and N.S.L. acknowledge support from the U.S. Department of Energy under award DE-FG02-03ER15483. A.C.T. acknowledges support from the Graduate Research Fellowship Program of the National Science Foundation. Research was in part carried out at the Molecular Materials Research Center in the Beckman Institute at the California Institute of Technology. The authors declare no competing financial interest.
Group:CCI Solar Fuels
Funding AgencyGrant Number
Ford FoundationUNSPECIFIED
Department of Energy (DOE)DE-FG02-03ER15483
NSF Graduate Research FellowshipUNSPECIFIED
Subject Keywords:Defect driven growth, atomic layer deposition, dislocation networks, 2D layered materials
Issue or Number:4
Record Number:CaltechAUTHORS:20200326-084207099
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Official Citation:Defect-Seeded Atomic Layer Deposition of Metal Oxides on the Basal Plane of 2D Layered Materials. Michael F. Mazza, Miguel Cabán-Acevedo, Joshua D. Wiensch, Annelise C. Thompson, and Nathan S. Lewis. Nano Letters 2020 20 (4), 2632-2638; DOI: 10.1021/acs.nanolett.0c00179
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:102116
Deposited By: Tony Diaz
Deposited On:27 Mar 2020 03:19
Last Modified:16 Nov 2021 18:08

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