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Air-gap gating of MgZnO/ZnO heterostructures

Tambo, T. and Falson, J. and Maryenko, D. and Kozuka, Y. and Tsukazaki, A. and Kawasaki, M. (2014) Air-gap gating of MgZnO/ZnO heterostructures. Journal of Applied Physics, 116 (8). Art. No. 084310. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20200402-144734077

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Abstract

The adaptation of “air-gap” dielectric based field-effect transistor technology to controlling the MgZnO/ZnO heterointerface confined two-dimensional electron system (2DES) is reported. We find it possible to tune the charge density of the 2DES via a gate electrode spatially separated from the heterostructure surface by a distance of 5 μm. Under static gating, the observation of the quantum Hall effect suggests that the charge carrier density remains homogeneous, with the 2DES in the 3 mm square sample the sole conductor. The availability of this technology enables the exploration of the charge carrier density degree of freedom in the pristine sample limit.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1063/1.4894155DOIArticle
ORCID:
AuthorORCID
Falson, J.0000-0003-3183-9864
Kozuka, Y.0000-0001-7674-600X
Tsukazaki, A.0000-0003-0251-063X
Kawasaki, M.0000-0001-6397-4812
Additional Information:© 2014 AIP Publishing LLC. (Received 23 June 2014; accepted 18 August 2014; published online 28 August 2014) We wish to thank to Y. Nakamura, R. Yamazaki, and R. Goto for helpful advice. This work was partly supported by JSPS Grant-in-Aid for Scientific Research(S) No.24226002 and for Young Scientist (A) No. 23686008 and the Japan Society for the Promotion of Science through “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program),” initiated by the Council for Science and Technology Policy (CSTP).
Funders:
Funding AgencyGrant Number
Japan Society for the Promotion of Science (JSPS)24226002
Japan Society for the Promotion of Science (JSPS)23686008
Council for Science and Technology Policy (CSTP)UNSPECIFIED
Issue or Number:8
Record Number:CaltechAUTHORS:20200402-144734077
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20200402-144734077
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:102297
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:02 Apr 2020 22:49
Last Modified:03 Apr 2020 21:49

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