Air-gap gating of MgZnO/ZnO heterostructures

Abstract

The adaptation of “air-gap” dielectric based field-effect transistor technology to controlling the MgZnO/ZnO heterointerface confined two-dimensional electron system (2DES) is reported. We find it possible to tune the charge density of the 2DES via a gate electrode spatially separated from the heterostructure surface by a distance of 5 μm. Under static gating, the observation of the quantum Hall effect suggests that the charge carrier density remains homogeneous, with the 2DES in the 3 mm square sample the sole conductor. The availability of this technology enables the exploration of the charge carrier density degree of freedom in the pristine sample limit.