Tambo, T. and Falson, J. and Maryenko, D. and Kozuka, Y. and Tsukazaki, A. and Kawasaki, M. (2014) Air-gap gating of MgZnO/ZnO heterostructures. Journal of Applied Physics, 116 (8). Art. No. 084310. ISSN 0021-8979. doi:10.1063/1.4894155. https://resolver.caltech.edu/CaltechAUTHORS:20200402-144734077
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Abstract
The adaptation of “air-gap” dielectric based field-effect transistor technology to controlling the MgZnO/ZnO heterointerface confined two-dimensional electron system (2DES) is reported. We find it possible to tune the charge density of the 2DES via a gate electrode spatially separated from the heterostructure surface by a distance of 5 μm. Under static gating, the observation of the quantum Hall effect suggests that the charge carrier density remains homogeneous, with the 2DES in the 3 mm square sample the sole conductor. The availability of this technology enables the exploration of the charge carrier density degree of freedom in the pristine sample limit.
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Additional Information: | © 2014 AIP Publishing LLC. (Received 23 June 2014; accepted 18 August 2014; published online 28 August 2014) We wish to thank to Y. Nakamura, R. Yamazaki, and R. Goto for helpful advice. This work was partly supported by JSPS Grant-in-Aid for Scientific Research(S) No.24226002 and for Young Scientist (A) No. 23686008 and the Japan Society for the Promotion of Science through “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program),” initiated by the Council for Science and Technology Policy (CSTP). | ||||||||||
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Issue or Number: | 8 | ||||||||||
DOI: | 10.1063/1.4894155 | ||||||||||
Record Number: | CaltechAUTHORS:20200402-144734077 | ||||||||||
Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20200402-144734077 | ||||||||||
Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||||||
ID Code: | 102297 | ||||||||||
Collection: | CaltechAUTHORS | ||||||||||
Deposited By: | George Porter | ||||||||||
Deposited On: | 02 Apr 2020 22:49 | ||||||||||
Last Modified: | 16 Nov 2021 18:10 |
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