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Hot Hole versus Hot Electron Transport at Copper/GaN Heterojunction Interfaces

Tagliabue, Giulia and DuChene, Joseph S. and Habib, Adela and Sundararaman, Ravishankar and Atwater, Harry A. (2020) Hot Hole versus Hot Electron Transport at Copper/GaN Heterojunction Interfaces. ACS Nano, 14 (5). pp. 5788-5797. ISSN 1936-0851. doi:10.1021/acsnano.0c00713.

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[img] PDF (Schematic of plasmonic photodiodes, AFM image and absorption spectrum of the Cu/p-GaN photodetector, responsivity of bare p-GaN, Cu/p-GaN, bare n-GaN, and Cu/n-GaN devices with determination of their respective Schottky barrier heights, direct...) - Supplemental Material
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Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has rarely been studied and the fundamental properties of its photoexcited hot carriers are not well understood. Here, we demonstrate that Cu nanoantennas on p-type gallium nitride (p-GaN) enable hot-hole-driven photodetection across the visible spectrum. Importantly, we combine experimental measurements of the internal quantum efficiency (IQE) with ab initio theoretical modeling to clarify the competing roles of hot-carrier energy and mean-free path on the performance of hot-hole devices above and below the interband threshold of the metal. We also examine Cu-based plasmonic photodetectors on corresponding n-type GaN substrates that operate via the collection of hot electrons. By comparing hot hole and hot electron photodetectors that employ the same metal/semiconductor interface (Cu/GaN), we further elucidate the relative advantages and limitations of these complementary plasmonic systems. In particular, we find that harnessing hot holes with p-type semiconductors is a promising strategy for plasmon-driven photodetection across the visible and ultraviolet regimes. Given the technological relevance of Cu and the fundamental insights provided by our combined experimental and theoretical approach, we anticipate that our studies will have a broad impact on the design of hot-carrier optoelectronic devices and plasmon-driven photocatalytic systems.

Item Type:Article
Related URLs:
URLURL TypeDescription
Tagliabue, Giulia0000-0003-4587-728X
DuChene, Joseph S.0000-0002-7145-323X
Sundararaman, Ravishankar0000-0002-0625-4592
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2020 American Chemical Society. Received: January 25, 2020; Accepted: April 14, 2020; Published: April 14, 2020. This material is based on work performed by the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub, supported through the Office of Science of the U.S. Department of Energy under Award No. DE-SC0004993. G.T. acknowledges support from the Swiss National Science Foundation through the Advanced Postdoc Mobility Fellowship, Grant No. P300P2_171417. A.H. and R.S. acknowledge startup funding from Rensselaer Polytechnic Institute. All theoretical calculations were performed at the Center for Computational Innovations at Rensselaer Polytechnic Institute. Author Contributions: G.T., J.S.D., and H.A.A. conceived of the idea and designed the experiments. G.T. performed all materials synthesis and device characterization. A.H. and R.S. performed all theoretical calculations. G.T. and J.S.D. wrote the manuscript with contributions from all authors. H.A.A. supervised the project. All authors have given approval to the final version of the manuscript. The authors declare no competing financial interest.
Funding AgencyGrant Number
Department of Energy (DOE)DE-SC0004993
Swiss National Science Foundation (SNSF)P300P2_171417
Rensselaer Polytechnic InstituteUNSPECIFIED
Subject Keywords:plasmonics, hot carriers, photodetection, hot holes, p-type GaN, copper
Issue or Number:5
Record Number:CaltechAUTHORS:20200414-133115396
Persistent URL:
Official Citation:Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces. Giulia Tagliabue, Joseph S. DuChene, Adela Habib, Ravishankar Sundararaman, and Harry A. Atwater. ACS Nano 2020 14 (5), 5788-5797; DOI: 10.1021/acsnano.0c00713
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:102532
Deposited By: Tony Diaz
Deposited On:14 Apr 2020 20:38
Last Modified:16 Nov 2021 18:13

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