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Pressure-induced superconductivity in topological type II Dirac semimetal NiTe₂

Li, Tao and Wang, Ke and Xu, Chunqiang and Hou, Qiang and Wu, Hao and Ge, Jun-Yi and Cao, Shixun and Zhang, Jincang and Ren, Wei and Xu, Xiaofeng and Yeh, Nai-Chang and Chen, Bin and Feng, Zhenjie (2019) Pressure-induced superconductivity in topological type II Dirac semimetal NiTe₂. . (Unpublished)

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Very recently, NiTe₂ has been reported to be a type II Dirac semimetal with Dirac nodes near the Fermi surface. Furthermore, it is unveiled that NiTe₂ presents the Hall Effect, which is ascribed to orbital magnetoresistance. The physical properties behavior of NiTe₂ under high pressure attracts us. In this paper, we investigate the electrical properties of polycrystalline NiTe₂ by application of pressure ranging from 3.4GPa to 54.45Gpa. Superconductivity emerges at critical pressure 12GPa with a transition temperature of 3.7K, and Tc reaches its maximum, 6.4 K, at the pressure of 52.8GPa. Comparing with the superconductivity in MoP, we purposed the possibility of topological superconductivity in NiTe₂. Two superconductivity transitions are observed with pressure increasing in single crystal.

Item Type:Report or Paper (Discussion Paper)
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URLURL TypeDescription Paper
Yeh, Nai-Chang0000-0002-1826-419X
Feng, Zhenjie0000-0003-3114-7390
Additional Information:This work at the Shanghai University (SHU) is jointly supported by the Ministry of Science and Technology of the People’s Republic of China No. 2016YFB0700201, National Natural Science Foundation of China (11774217, 10904088), Shanghai Pujiang Program (13PJD015), and Science and Technology commission of Shanghai Municipality (13ZR1415200). N.-C. Yeh acknowledges the hospitality and sponsorship of her visit to the SHU under the Overseas Expert Recruitment Program at SHU.
Funding AgencyGrant Number
Ministry of Science and Technology (Taipei)2016YFB0700201
National Natural Science Foundation of China11774217
National Natural Science Foundation of China10904088
Shanghai Pujiang Program13PJD015
Shanghai Municipality Science and Technology Commission13ZR1415200
Record Number:CaltechAUTHORS:20200506-100200093
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:103024
Deposited By: Tony Diaz
Deposited On:06 May 2020 17:14
Last Modified:06 May 2020 17:14

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