A Caltech Library Service

Controlling the dopant profile for SRH suppression at low current densities in λ ≈ 1330 nm GaInAsP light-emitting diodes

Santhanam, Parthiban and Li, Wei and Zhao, Bo and Rogers, Chris and Gray, Dodd Joseph, Jr. and Jahelka, Phillip and Atwater, Harry A. and Fan, Shanhui (2020) Controlling the dopant profile for SRH suppression at low current densities in λ ≈ 1330 nm GaInAsP light-emitting diodes. Applied Physics Letters, 116 (20). Art. No. 203503. ISSN 0003-6951. doi:10.1063/5.0002058.

[img] PDF - Published Version
See Usage Policy.

[img] PDF - Accepted Version
See Usage Policy.


Use this Persistent URL to link to this item:


The quantum efficiency of double hetero-junction light-emitting diodes (LEDs) can be significantly enhanced at low current density by tailoring the spatial profile of dopants to suppress Shockley–Read–Hall recombination. To demonstrate this effect, we model, design, grow, fabricate, and test a GaInAsP LED (λ≈ 1330 nm) with an unconventional dopant profile. Compared against that of our control design, which is a conventional n⁺-n-p⁺ double hetero-junction LED, the dopant profile near the n-p⁺ hetero-structure of the design displaces the built-in electric field in such a way that the J₀₂ space charge recombination current is suppressed. The design principle generalizes to other material systems and could be applicable to efforts to observe and exploit electro-luminescent refrigeration at practical power densities.

Item Type:Article
Related URLs:
URLURL TypeDescription Paper
Santhanam, Parthiban0000-0002-5250-8952
Li, Wei0000-0002-2227-9431
Gray, Dodd Joseph, Jr.0000-0003-0469-599X
Jahelka, Phillip0000-0002-1460-7933
Atwater, Harry A.0000-0001-9435-0201
Fan, Shanhui0000-0002-0081-9732
Additional Information:© 2020 Published under license by AIP Publishing. Submitted: 31 January 2020; Accepted: 6 May 2020; Published Online: 22 May 2020. Data Availability: The data that support the findings of this study are available from the corresponding author upon reasonable request. Dr. Ping-Show Wong of OEpic performed the metalorganic chemical vapor deposition (MOCVD) epitaxial growth. Room temperature PL spectra were acquired in collaboration with Dr. Tomás Sarmiento in the lab of Professor Jelena Vuckovic. Tom Carver deposited the n-metal Ti/Pt/Au. Dr. Michelle Sherrott helped diagnose an early p-metal issue. Professor Eric Pop provided advice and aid in characterization facilities access. The selective wet etch recipes were based on suggestions from Dr. Vijay Jayaraman of Praevium Research, Inc. This work was supported by the U.S. Department of Energy (DoE) “Light-Material Interactions in Energy Conversion” Energy Frontier Research Center (EFRC) under Grant No. DE-SC0001293 and the U.S. DoE “Photonics at Thermodynamic Limits” EFRC under Grant No. DE-SC0019140.
Funding AgencyGrant Number
Department of Energy (DOE)DE-SC0001293
Department of Energy (DOE)DE-SC0019140
Issue or Number:20
Record Number:CaltechAUTHORS:20200522-130424072
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:103421
Deposited By: Tony Diaz
Deposited On:22 May 2020 20:16
Last Modified:16 Nov 2021 18:21

Repository Staff Only: item control page