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Electrical characterization Of SiGe thin films

McCormack, J. A. and Fleurial, Jean-Pierre (1991) Electrical characterization Of SiGe thin films. In: Modern perspectives on thermoelectrics and related materials : symposium held May 1-2, 1991, Anaheim, California. Materials Research Society Symposia Proceedings. No.234. Materials Research Society , Pittsburgh, PA, pp. 135-143. ISBN 9781558991286.

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An apparatus for measuring electrical resistivity and Hall coefficient on both thin films and bulk material over a temperature range of 300K to 1300K has been built. A unique alumina fixture, with four molybdenum probes, allows arbitrarily shaped samples, up to 2.5 cm diameter, to be measured using van der Pauw's method. The system is fully automated and is constructed with commercially available components. Measurements of the electrical properties of doped and undoped Si-Ge thin films, grown by liquid phase epitaxy reported here, are to illustrate the capabilities of the apparatus.

Item Type:Book Section
Additional Information:This manuscript published as a conference proceedings: Conference Information: Modern Perspectives on Thermoelectrics and Related Materials Symposium, Location: Anaheim, CA USA Source: Modern Perspectives on Thermoelectrics and Related Materials Symposium Pages: 135-43 Published: 1991. McCormack, J. A.; Fleurial, J. P. Mater. Res. Soc. Symp. Proc. 1991, 234, 135. This work was carried out at the Jet Propulsion Laboratory/ California Institute of Technology, under contract with the National Aeronautics and Space Administration.
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Series Name:Materials Research Society Symposia Proceedings
Issue or Number:234
Record Number:CaltechAUTHORS:jsmrssp91
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10349
Deposited By: Jeff Snyder
Deposited On:01 May 2008
Last Modified:03 Oct 2019 00:08

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