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Effect of Al mole fraction on carrier diffusion lengths and lifetimes in AlxGa1−xAs

Zarem, H. A. and Lebens, J. A. and Nordstrom, K. B. and Sercel, P. C. and Sanders, S. and Eng, L. E. and Yariv, A. and Vahala, K. J. (1989) Effect of Al mole fraction on carrier diffusion lengths and lifetimes in AlxGa1−xAs. Applied Physics Letters, 55 (25). pp. 2622-2624. ISSN 0003-6951. doi:10.1063/1.101955.

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The ambipolar diffusion length and carrier lifetime are measured in AlxGa1−xAs for several mole fractions in the interval 0<x<0.38. These parameters are found to have significantly higher values in the higher mole fraction samples. These increases are attributed to occupation of states in the indirect valleys, and supporting calculations are presented.

Item Type:Article
Related URLs:
URLURL TypeDescription
Sercel, P. C.0000-0002-1734-3793
Vahala, K. J.0000-0003-1783-1380
Additional Information:© 1989 American Institute of Physics. Received 15 September 1989; accepted 20 October 1989. The authors would like to acknowledge the support of the Office of Naval Research, the National Science Foundation (NSF), and the SDIO-ISTC. Two of us (PS and SS) would like to acknowledge the support of a graduate NSF fellowship.
Issue or Number:25
Record Number:CaltechAUTHORS:ZARapl89b
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10398
Deposited By: Tony Diaz
Deposited On:02 May 2008
Last Modified:08 Nov 2021 21:07

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