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Lattice match: An application to heteroepitaxy

Zur, A. and McGill, T. C. (1984) Lattice match: An application to heteroepitaxy. Journal of Applied Physics, 55 (2). pp. 378-386. ISSN 0021-8979. doi:10.1063/1.333084.

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We define the concept of lattice match for any pair of crystal lattices in any given crystal direction, allowing for a periodic reconstruction of the interface. An algorithm for a systematic search for all possible matches is developed, and some examples of nonstandard lattice matches are given for CdTe on GaAs and sapphire to illustrate the method. For the case of CdTe on GaAs, our results agree with published results, both with respect to growth plane and orientation for CdTe(111) on GaAs(100). For CdTe on sapphire, our results agree with published results with respect to growth plane.

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Additional Information:© 1984 American Institute of Physics. Received 11 July 1983; accepted 20 September 1983. We would like to acknowledge fruitful discussions with Professor Marc A. Nicolet, who first inspired us to think in these directions. This work was supported in part by the Office of Naval Research under contract No. N00014-79-C-0797.
Subject Keywords:cadmium tellurides, gallium arsenides, sapphire, epitaxy, algorithms, crystal lattices, lattice parameters, thin films, epitaxial layers, crystal orientation, interfaces, aluminium oxides, silicon, crystal growth
Issue or Number:2
Record Number:CaltechAUTHORS:ZURjap84
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10417
Deposited By: Archive Administrator
Deposited On:02 May 2008
Last Modified:08 Nov 2021 21:07

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