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Nanoscale axial position and orientation measurement of hexagonal boron nitride quantum emitters using a tunable nanophotonic environment

Jha, Pankaj K. and Akbari, Hamidreza and Kim, Yonghwi and Atwater, Harry A. (2020) Nanoscale axial position and orientation measurement of hexagonal boron nitride quantum emitters using a tunable nanophotonic environment. . (Unpublished)

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Color centers in hexagonal boron nitride (hBN) have emerged as promising candidates for single-photon emitters (SPEs) due to their bright emission characteristics and potential for high temperature operation, but precisely resolving emitter location is an important outstanding issue for many applications. While single-molecule super-resolution microscopy schemes can resolve emitter lateral position at the nanometer scale, complete determination of both axial position and three-dimensional dipole orientation (θ, φ) of these quantum emitters is a fundamental challenge. We report a method for determining both the axial position and three-dimensional orientation of SPEs in \textit{h}BN by tuning the photonic local density of states, using a vanadium dioxide (VO₂) phase change material. Using this method, we were able to locate several specific quantum emitters at an axial distance of ~ 20 nm from the hBN/VO₂ interface while also determining their full dipolar orientation (θ, φ). Our approach may serve as a practical method to deterministically couple quantum emitters in hBN and other materials to photonic nanostructures, for applications in integrated quantum photonics.

Item Type:Report or Paper (Discussion Paper)
Related URLs:
URLURL TypeDescription Paper
Jha, Pankaj K.0000-0002-5839-3391
Atwater, Harry A.0000-0001-9435-0201
Additional Information:We thank S. Nam for the useful discussions. This work was supported by the DOE “Photonics at Thermodynamic Limits” Energy Frontier Research Center under grant DE-SC0019140 and by the Boeing Company. Author contributions: P. K. J, H. A, Y. K, and H. A. A conceived and developed the idea. P. K. J prepared the hBN flakes and performed AFM measurements. H. A performed the optical characterization of hBN flakes and correlation measurements. P. K. J and H. A performed emission polarimetry of hBN quantum emitters. Y. K prepared VO₂/Sapphire sample; performed ellipsometry, full-wave simulations, optical, and AFM characterizations of VO₂ thin films. P. K. J simulated the optical response of hBN quantum emitters and theoretical estimations with inputs from all co-authors. H.A.A. supervised all the experiments, calculations, and data collection. All authors contributed to the data interpretation, presentation, and writing of the manuscript.
Funding AgencyGrant Number
Department of Energy (DOE)DE-SC0019140
Boeing CorporationUNSPECIFIED
Record Number:CaltechAUTHORS:20200818-100322873
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:104992
Deposited By: Tony Diaz
Deposited On:18 Aug 2020 18:19
Last Modified:18 Aug 2020 18:19

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