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P-60: Single-Step Plasma-Enhanced Chemical Vapor Deposition of Graphene on Cu Ink and Sputtered Cu Thin Films

Lu, Chen-Hsuan and Leu, Chyi-Ming and Lee, Tzong-Ming and Yeh, Nai-Chang (2020) P-60: Single-Step Plasma-Enhanced Chemical Vapor Deposition of Graphene on Cu Ink and Sputtered Cu Thin Films. SID Symposium Digest of Technical Papers, 51 (1). pp. 1565-1568. ISSN 0097-966X. https://resolver.caltech.edu/CaltechAUTHORS:20200928-150107318

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Abstract

Ink materials for Inkjet Printing generally suffer from low conductivity, whereas the thickness of Cu interconnects requires further reduction for better flexibility. Here we demonstrate successful growth of graphene on both Cu Ink and sputtered Cu by plasma‐enhanced chemical vapor deposition as a promising solution to address the aforementioned issues.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1002/sdtp.14190DOIArticle
ORCID:
AuthorORCID
Yeh, Nai-Chang0000-0002-1826-419X
Additional Information:© 2020 The Society for Information Display. Issue Online: 25 September 2020; Version of Record online: 25 September 2020.
Subject Keywords:Cu ink; Inkjet printing; Sputtered Cu; Graphene PECVD
Issue or Number:1
Record Number:CaltechAUTHORS:20200928-150107318
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20200928-150107318
Official Citation:Lu, C., Leu, C., Lee, T. and Yeh, N. (2020), P‐60: Single‐Step Plasma‐Enhanced Chemical Vapor Deposition of Graphene on Cu Ink and Sputtered Cu Thin Films. SID Symposium Digest of Technical Papers, 51: 1565-1568. doi:10.1002/sdtp.14190
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:105595
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:28 Sep 2020 22:14
Last Modified:28 Sep 2020 22:14

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