McGill, T. C. (1985) Superlattices: New Semiconductor Materials. In: Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York , New York, NY, pp. 375-380. ISBN 9781461576846. https://resolver.caltech.edu/CaltechAUTHORS:20201001-145811592
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Abstract
The possibility of producing man-made structures with very novel properties is discussed. To illustrate some of the possibilities, we consider the HgTe-CdTe superlattice, the strained-layer superlattice, and the transport through thin barrier layers.
| Item Type: | Book Section | |||||||||
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| Additional Information: | © Springer Science+Business Media New York 1985. The author would like to acknowledge extensive discussions over the years with D. L. Smith, J. N. Schulman, C. Mailhiot, G. Y. Wu, and G. Osbourn. Work reported in this paper has been supported by the Office of Naval Research and the Army Research Office. | |||||||||
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| Subject Keywords: | Point Symmetry; Conduction Band Edge; Valence Band Edge; Band Offset; Super Lattice | |||||||||
| Record Number: | CaltechAUTHORS:20201001-145811592 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20201001-145811592 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 105736 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | George Porter | |||||||||
| Deposited On: | 02 Oct 2020 15:30 | |||||||||
| Last Modified: | 02 Oct 2020 15:30 |
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