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Structure of crystallized layers by laser annealing of 〈100〉 and 〈111〉 self-implanted silicon samples

Foti, G. and Rimini, E. and Tseng, W. S. and Mayer, J. W. (1978) Structure of crystallized layers by laser annealing of 〈100〉 and 〈111〉 self-implanted silicon samples. Applied Physics, 15 (4). pp. 365-369. ISSN 0340-3793. doi:10.1007/bf00886154.

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Channeling effect techniques with a 2.0 MeV He⁺ Rutherford backscattering and transmission electron microscopy were used to characterize the crystallized layers after Q-switched ruby laser irradiation of 4000 Å thick amorphous layer on〈100〉and〈111〉underlined crystal substrates. At a laser energy density of 2.5 J/cm² the crystal layer on the〈111〉specimen contains a large density of stacking-faults, that on〈100〉specimen contains a very small amount of screw dislocation lines. High quality single-crystal layers have been obtained after irradiation at 3.5 J/cm². From a comparison with the growth rate and defect structure observed in thermally annealed implanted-amorphous layers, we propose that crystal growth by 50 ns pulse laser annealing occurs by melting the amorphous layer.

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Additional Information:© 1978 Springer. Received 10 October 1977; Accepted 12 December 1977.
Issue or Number:4
Classification Code:PACS: 79.20
Record Number:CaltechAUTHORS:20201014-154015386
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Official Citation:Foti, G., Rimini, E., Tseng, W.S. et al. Structure of crystallized layers by laser annealing of〈100〉and〈111〉self-implanted silicon samples. Appl. Phys. 15, 365–369 (1978).
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:106085
Deposited By: Tony Diaz
Deposited On:14 Oct 2020 22:49
Last Modified:16 Nov 2021 18:50

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