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Cryogenic W-Band SiGe BiCMOS Low-Noise Amplifier

Varonen, Mikko and Sheikhipoor, Nima and Gabritchidze, Bekari and Cleary, Kieran and Forstén, Henrik and Rücker, Holger and Kaynak, Mehmet (2020) Cryogenic W-Band SiGe BiCMOS Low-Noise Amplifier. In: 2020 IEEE/MTT-S International Microwave Symposium (IMS). IEEE , Piscataway, NJ, pp. 185-188. ISBN 9781728168159. https://resolver.caltech.edu/CaltechAUTHORS:20201015-152733092

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Abstract

In this paper we present the design, modeling, and on-wafer measurement results of an ultra- wideband cryogenically cooled SiGe low-noise amplifier covering at least 71 to 116 GHz. When cryogenically cooled to 20 K and measured on wafer the SiGe amplifier shows 95-116-K noise temperature from 77 to 116 GHz. This means 6 to 7 times improvement in noise temperature compared to room temperature noise. The measured gain is around 20 dB for frequency range of 71 to 116 GHz with unprecedented low power consumption of 2.8 mW. To the best of authors' knowledge, this is the highest frequency cryogenic SiGe low-noise amplifier and lowest noise performance for silicon amplifiers for W-band reported to date.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/ims30576.2020.9223922DOIArticle
ORCID:
AuthorORCID
Varonen, Mikko0000-0002-6515-5092
Forstén, Henrik0000-0003-1841-9769
Rücker, Holger0000-0001-7407-959X
Additional Information:© 2020 IEEE. This work was supported through the Academy of Finland under projects MIDERI, HISENS, and MilliRad (decision no 310234, 310879, and 314541, respectively).
Funders:
Funding AgencyGrant Number
Academy of Finland310234
Academy of Finland310879
Academy of Finland314541
Subject Keywords:BiCMOS integrated circuits, cryogenics, heterojunction bipolar transistors (HBT), low-noise amplifiers (LNA), MMICs, silicon germanium (SiGe)
Record Number:CaltechAUTHORS:20201015-152733092
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20201015-152733092
Official Citation:M. Varonen et al., "Cryogenic W-Band SiGe BiCMOS Low-Noise Amplifier," 2020 IEEE/MTT-S International Microwave Symposium (IMS), Los Angeles, CA, USA, 2020, pp. 185-188, doi: 10.1109/IMS30576.2020.9223922
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:106091
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:16 Oct 2020 17:53
Last Modified:16 Oct 2020 17:53

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