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High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate

Bar-Chaim, N. and Lau, K. Y. and Ury, I. and Yariv, A. (1983) High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate. Applied Physics Letters, 43 (3). pp. 261-262. ISSN 0003-6951. doi:10.1063/1.94319.

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A high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insulating substrate. The 75-µm-diam photodiode has a 3-dB bandwidth of 2.5 GHz and responsivity of 0.45 A/W at 8400 Å (external quantum efficiency of 65%). The diode is suitable for monolithic integration with other optoelectronic devices.

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Additional Information:Copyright © 1983 American Institute of Physics. (Received 1 March 1983; accepted for publication 29 April 1983) This research was supported by the Defense Advanced Research Project Agency.
Subject Keywords:gallium arsenides, sorptive properties, photodiodes, gallium arsenides, aluminium arsenides, inhomogeneous materials, liquid phase epitaxy, chromium additions, layered materials, fabrication, electrical insulators, radii, efficiency, GHz range 1−100, bandwidth
Issue or Number:3
Record Number:CaltechAUTHORS:BARapl83
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10610
Deposited By: Archive Administrator
Deposited On:21 May 2008
Last Modified:08 Nov 2021 21:09

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