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Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system

Yu, E. T. and Phillips, M. C. and Chow, D. H. and Collins, D. A. and Wang, M. W. and McCaldin, J. O. and McGill, T. C. (1992) Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system. Physical Review B, 46 (20). pp. 13379-13388. ISSN 0163-1829. doi:10.1103/PhysRevB.46.13379.

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We have used x-ray photoelectron spectroscopy to measure valence-band offsets in situ for AlSb/ZnTe, AlSb/GaSb, and GaSb/ZnTe(100) heterojunctions grown by molecular-beam epitaxy. For the AlSb/ZnTe heterojunction, a valence-band offset ΔEv=0.42±0.07 eV was obtained. Our data indicated that an intermediate compound, containing Al and Te, was formed at the AlSb/ZnTe(100) interface. Measurements of the AlSb/GaSb and GaSb/ZnTe valence-band offsets demonstrated a clear violation of band offset transitivity for the AlSb/GaSb/ZnTe material system, suggesting that chemical reactivity at the AlSb/ZnTe and GaSb/ZnTe interfaces can exert a significant influence on band offset values. Direct evidence of the influence of interfacial growth conditions on the AlSb/ZnTe and GaSb/ZnTe band offset values was also observed.

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Additional Information:©1992 The American Physical Society. Received 8 June 1992. Two of us (E.T.Y. and M.C.P.) would like to acknowledge financial support from the AT&T Foundation and the IBM Corporation, respectively. Part of this work was supported by the Office of Naval Research under Grants Nos. N00014-90-J-1742 and N000014-89-J-1141.
Issue or Number:20
Record Number:CaltechAUTHORS:YUEprb92
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ID Code:10614
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Deposited On:21 May 2008
Last Modified:08 Nov 2021 21:09

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