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Electronic noise of warm electrons in semiconductors from first-principles

Choi, Alexander Y. and Cheng, Peishi S. and Minnich, Austin J. (2020) Electronic noise of warm electrons in semiconductors from first-principles. . (Unpublished)

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The ab-initio theory of low-field electronic transport properties such as carrier mobility in semiconductors is well-established. However, an equivalent treatment of electronic fluctuations about a non-equilibrium steady state, which are readily probed experimentally, remains less explored. Here, we report a first-principles theory of electronic noise for warm electrons in semiconductors. In contrast with typical numerical methods used for electronic noise, no adjustable parameters are required in the present formalism, with the electronic band structure and scattering rates calculated from first-principles. We demonstrate the utility of our approach by applying it to GaAs and show that spectral features in AC transport properties and noise originate from the disparate time scales of momentum and energy relaxation, despite the dominance of optical phonon scattering. Our formalism enables a parameter-free approach to probe the microscopic transport processes that give rise to electronic noise in semiconductors.

Item Type:Report or Paper (Discussion Paper)
Related URLs:
URLURL TypeDescription Paper
Choi, Alexander Y.0000-0003-2006-168X
Cheng, Peishi S.0000-0002-3513-9972
Minnich, Austin J.0000-0002-9671-9540
Additional Information:The authors thank Jin-Jian Zhou, I-Te Lu, Vatsal Jhalani, and Marco Bernardi, for assistance with Perturbo and useful discussions. This work was supported by AFOSR under Grant Number FA9550-19-1-0321.
Funding AgencyGrant Number
Air Force Office of Scientific Research (AFOSR)FA9550-19-1-0321
Record Number:CaltechAUTHORS:20201019-101209881
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:106142
Deposited By: Tony Diaz
Deposited On:20 Oct 2020 15:57
Last Modified:20 Oct 2020 15:57

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