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Electronic noise of warm electrons in semiconductors from first principles

Choi, Alexander Y. and Cheng, Peishi S. and Hatanpää, Benjamin and Minnich, Austin J. (2021) Electronic noise of warm electrons in semiconductors from first principles. Physical Review Materials, 5 (4). Art. No. 044603. ISSN 2475-9953. doi:10.1103/PhysRevMaterials.5.044603.

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The ab initio theory of low-field electronic transport properties such as carrier mobility in semiconductors is well-established. However, an equivalent treatment of electronic fluctuations about a nonequilibrium steady state, which are readily probed experimentally, remains less explored. Here, we report a first-principles theory of electronic noise for warm electrons in semiconductors. In contrast with typical numerical methods used for electronic noise, no adjustable parameters are required in the present formalism, with the electronic band structure and scattering rates calculated from first principles. We demonstrate the utility of our approach by applying it to GaAs and show that spectral features in AC transport properties and noise originate from the disparate time scales of momentum and energy relaxation, despite the dominance of optical phonon scattering. Our formalism enables a parameter-free approach to probe the microscopic transport processes that give rise to electronic noise in semiconductors.

Item Type:Article
Related URLs:
URLURL TypeDescription Paper
Choi, Alexander Y.0000-0003-2006-168X
Cheng, Peishi S.0000-0002-3513-9972
Hatanpää, Benjamin0000-0002-8441-0183
Minnich, Austin J.0000-0002-9671-9540
Additional Information:© 2021 American Physical Society. Received 23 September 2020; revised 25 January 2021; accepted 1 March 2021; published 6 April 2021. The authors thank Jin-Jian Zhou, I-Te Lu, Vatsal Jhalani, and Marco Bernardi for assistance with Perturbo and useful discussions. This work was supported by AFOSR under Grant No. FA9550-19-1-0321. This material is based upon work supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1745301. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author and do not necessarily reflect the views of the National Science Foundation.
Funding AgencyGrant Number
Air Force Office of Scientific Research (AFOSR)FA9550-19-1-0321
NSF Graduate Research FellowshipDGE-1745301
Issue or Number:4
Record Number:CaltechAUTHORS:20201019-101209881
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:106142
Deposited By: Tony Diaz
Deposited On:20 Oct 2020 15:57
Last Modified:21 Apr 2021 17:08

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