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A groove GaInAsP laser on semi-insulating InP using a laterally diffused junction

Yu, K. L. and Koren, U. and Chen, T. R. and Yariv, A. (1982) A groove GaInAsP laser on semi-insulating InP using a laterally diffused junction. IEEE Journal of Quantum Electronics, 18 (5). pp. 817-819. ISSN 0018-9197.

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Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrates. Three n-type layers are grown with a single liquid phase epitaxial (LPE) growth process, and the p-n junction is formed by a lateral Zn diffusion. The active layer inside the groove provides a real index waveguide. Threshold currents as low as 14 mA with 300 μm cavity length are obtained. A single longitudinal mode at 1.3 μm up to1.4 I_{TH}is observed. The lasers operate with a single lateral mode when the active region width is less than 2.5 μm. This laser is suitable for monolithic integration with other optoelectronic devices.

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Additional Information:© Copyright 1982 IEEE. Reprinted with permission. Manuscript received January 4, 1982. This work was supported by the Office of Naval Research and the National Science Foundation (Optical Communication Program). The authors would like to thank Dr. N. Bar-Chaim and Dr. S. Margalit of the California Institute of Technology for very helpful discussions.
Issue or Number:5
Record Number:CaltechAUTHORS:YUKieeejqe82
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10615
Deposited By: Archive Administrator
Deposited On:21 May 2008
Last Modified:03 Oct 2019 00:11

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