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Mode stabilization mechanism of buried-waveguide lasers with lateral diffused junctions

Yu, K. L. and Lau, Kam Y. and Margalit, Shlomo and Koren, Uziel and Chen, T. R. and Yariv, Amnon (1983) Mode stabilization mechanism of buried-waveguide lasers with lateral diffused junctions. IEEE Journal of Quantum Electronics, 19 (3). pp. 426-432. ISSN 0018-9197.

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The mode stabilization behavior of the buried active waveguide with lateral diffused junction is theoretically investigated. The study shows that for an active waveguide of width around 5 μm with a lateral diffused junction in the middle, the single fundamental transverse mode is preferred as the injection level is raised. The theoretical results are found to be in good agreement with experimental results observed in the groove transverse junction InGaAsP/InP laser.

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Additional Information:© Copyright 1983 IEEE. Reprinted with permission. Manuscript received May 14, 1982; revised August 23, 1982.
Issue or Number:3
Record Number:CaltechAUTHORS:YUKieeejqe83
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10616
Deposited By: Archive Administrator
Deposited On:21 May 2008
Last Modified:03 Oct 2019 00:11

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