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S-Like Excited States of the 78-meV Acceptor in GaAs

Hetzler, S. R. and McGill, T. C. and Hunter, A. T. (1985) S-Like Excited States of the 78-meV Acceptor in GaAs. In: Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York , New York, NY, pp. 671-674. ISBN 9781461576846.

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We report the first observation of s-like excited states of a double acceptor in a semiconductor. Measurements on two different liquid encapsulated Czochralski GaAs samples containing the 78-meV acceptor showed the first s-like excited state of this level to be split. We present a simple model which predicts the 1s¹2s¹ excited state of a double acceptor in GaAs to be split by 4.0 meV, in good agreement with our observed value of 2.6 meV.

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Additional Information:© Springer Science+Business Media New York 1985. We would like to acknowledge the support from the Office of Naval Research under contract No. N00014-81-K-0305. The authors also gratefully acknowledge M. H. Young of Hughes Research Laboratories for providing the samples used in this study.
Funding AgencyGrant Number
Office of Naval Research (ONR)N00014-81-K-0305
Subject Keywords:Excited State, Static Dielectric Constant, Exchange Splitting, RAMAN Scattering Spectrum, Laser Photon Energy
Record Number:CaltechAUTHORS:20201027-183158985
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:106309
Deposited By: Rebecca Minjarez
Deposited On:29 Oct 2020 15:36
Last Modified:16 Nov 2021 18:52

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