Yi, M. B. and Paslaski, J. and Lu, L-T. and Margalit, S. and Yariv, A. and Blauvelt, H. and Lau, K. (1985) InGaAsP p-i-n photodiodes for optical communication at the 1.3-µm wavelength. Journal of Applied Physics, 58 (12). pp. 4730-4732. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:YIMjap85
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Abstract
The preparation and properties of Cd-diffused p-n homojunction InGaAsP photodiodes designed specifically for operation at the 1.3-µm wavelength are described. At a reverse bias of 10 V, the dark current of these diodes was as low as 15 pA. The peak responsivity at 1.3-µm wavelength was 0.7 A/W. An impulse response (full width at half maximum) of 60 ps and a 3-dB bandwidth of 5.5 GHz were achieved. J
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright © 1985 American Institute of Physics. Received 1 August 1985; accepted 30 August 1985. The research reported in this paper is supported through contracts with the National Science Foundation, the Office of Naval Research and the Air Force Office of Scientific Research. The authors wish to acknowledge the help of H. Chen, and Z. Rav-Noy for some measurements of device parameters. |
| Subject Keywords: | P−I−N JUNCTIONS, DESIGN, OPERATION, FABRICATION, DARK CONDUCTIVITY, RESPONSE FUNCTIONS, INDIUM ARSENIDES, GALLIUM ARSENIDES, INDIUM PHOSPHIDES, GALLIUM PHOSPHIDES, OPTICAL COMMUNICATION SYSTEMS, PHOTODIODES, LIQUID PHASE EPITAXY |
| Record Number: | CaltechAUTHORS:YIMjap85 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:YIMjap85 |
| Alternative URL: | http://dx.doi.org/10.1063/1.336247 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 10633 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 22 May 2008 |
| Last Modified: | 26 Dec 2012 10:03 |
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