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Inelastic and resonant tunneling in GaAs/AlAs heterostructures

Collins, R. T. and Bonnefoi, A. R. and Lambe, J. and McGill, T. C. and Burnham, R. D. (1985) Inelastic and resonant tunneling in GaAs/AlAs heterostructures. In: Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York , New York, NY, pp. 437-440. ISBN 9781461576846.

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We report the observation of inelastic and resonant tunneling in a study of electronic transport perpendicular to single or multiple AlAs layers sandwiched between GaAs layers. First derivatives and second derivatives of the low temperature current- voltage curves (I-V) for samples with single, 50 Å thick, AlAs layers revealed structure at both the AlAs and GaAs longitudinal optical phonon energies. These were attributed to the inelastic excitation of AlAs phonons and to a self-energy effect in the GaAs, respectively. The I-V curves for samples with two AlAs barriers of approximately the same width exhibited negative resistance regions due to resonant tunneling.

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Additional Information:© Springer Science+Business Media New York 1985. The authors wish to acknowledge D. L. Smith, C. Mailhiot, R. S. Bauer, T. L. Paoli, and W. Streifer for valuable discussions and are grateful to H. Chung, R. D. Yingling, Jr., F. Endicott, M. Bernstein, M. Mosby, J. Tramontana, J. Walker, A. Alimonday, G. L. Harnagel, and R. Ritter for technical assistance. This work was supported in part by the Office of Naval Research under Contract No. N00014-82-K-0556.
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Office of Naval Research (ONR)N00014-82-K-0556
Subject Keywords:Current Transport, GaAs Layer, Resonant Tunneling, Derivative Spectrum, Barrier Width
Record Number:CaltechAUTHORS:20201104-193125647
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:106446
Deposited By: Rebecca Minjarez
Deposited On:09 Nov 2020 16:30
Last Modified:16 Nov 2021 18:54

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