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Perspectives on formation and properties of semiconductor interfaces

Bauer, R. S. and Miles, R. H. and McGill, T. C. (1987) Perspectives on formation and properties of semiconductor interfaces. In: Semiconductor Interfaces: Formation and Properties. Springer Proceedings in Physics. No.22. Springer Berlin Heidelberg , Berlin, Heidelberg, pp. 372-388. ISBN 9783642729690.

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Recent progress in experimentally and theoretically understanding interfaces at the atomic level suggest that ultimate electronic systems may one day be fabricated on a single integrated chip. If such elements as Si VLSI processors, GaAs/AIAs integrated optoelectronic 10 devices, II-VI superlattice visible displays and high speed III-V processors are to be integrated, interface formation and in situ processing will be required at a level of sophistication well beyond what is available today. In this paper, we review recent developments in interface formation by both MOCVD and MBE. To illustrate the power of our diagnostic methods, the details of epitaxial interface formation on an atomic scale are reviewed for lattice matched systems (Ge/GaAs/AIAs) and epitaxial silicides (Ni/Si2/Si) as well as oxidation of silicon to form Si/SiO2 interfaces. New developments in using lattice mismatched superlattices with strained layers are discussed for CdTe/ZnTe. Additional complications of growing compound semiconductors on elemental substrates (e.g., anti-phase domains) are discussed for GaAs growth on Si(l00).

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Additional Information:© Springer-Verlag Berlin Heidelberg 1987. The portions of this paper reporting results from the Xerox photoemission research would not have been possible without major collaborative contributions from H. W. Sang, Jr., A. Katnani, P. Zurcher, P. Chiaradia, and J. C. McMenamin, Jr. Perspectives on MOCVD are due to the insight and technical contributions of R. D. Burnham (Amaco). We acknowledge the exciting contributions and advice of R. L. Thornton (Xerox) on impurity-induced disordering of superlattices. The work at Caltech on strained-layer superlattices could not have progressed without the generous assistance of M. B. Johnson and C. Y. Wu. Ted Woodward (Caltech) provided stimulating discussions and shared results on resonant tunnelling device structures prior to publication. The support from the Office of Naval Research (L. R. Cooper) and DARPA (R. Reynolds, S. Roosild, and J. Murphy) is greatfully acknowledged for both its financial contribution as well as the technical perspective provided by the individuals. We are grateful to D. E. Aspnes of Bellcore for generously providing a preprint of his GaAs/Si work prior to publication.
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Office of Naval Research (ONR)UNSPECIFIED
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Subject Keywords:Molecular Beam Epitaxy, Metal Organic Chemical Vapor Deposition, Schottky Barrier Height, Interface Formation, Molecular Beam Epitaxy Growth
Series Name:Springer Proceedings in Physics
Issue or Number:22
Record Number:CaltechAUTHORS:20201104-193125750
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:106447
Deposited By: Rebecca Minjarez
Deposited On:09 Nov 2020 16:28
Last Modified:16 Nov 2021 18:54

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