Multi-Quantum well integrated stacks for detection in the mid-infrared

Abstract

The development and improvement of advanced epitaxial crystal growth techniques such as molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) during the last two decades, has opened the door for the realization of devices in the quantum size regime. Quantum size phenomena can be observed when the experimental dimensions approach the order of magnitude of the DeBroglie wavelength associated with the system under investigation. The tools needed to understand and design artificial semiconductor structures, are known under the label “bandgap engineering.”