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Multi-Quantum well integrated stacks for detection in the mid-infrared

Gravé, I. and Shakouri, A. and Kuze, N. and Yariv, A. (1994) Multi-Quantum well integrated stacks for detection in the mid-infrared. In: Advances in Integrated Optics. Springer US , Boston, MA, pp. 243-258. ISBN 9781461360964. https://resolver.caltech.edu/CaltechAUTHORS:20201111-190741605

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Abstract

The development and improvement of advanced epitaxial crystal growth techniques such as molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) during the last two decades, has opened the door for the realization of devices in the quantum size regime. Quantum size phenomena can be observed when the experimental dimensions approach the order of magnitude of the DeBroglie wavelength associated with the system under investigation. The tools needed to understand and design artificial semiconductor structures, are known under the label “bandgap engineering.”


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1007/978-1-4615-2566-0_16DOIArticle
Additional Information:© Springer Science+Business Media New York 1994.
Subject Keywords:Applied Voltage, Drift Velocity, Interband Transition, Infrared Detector, Negative Differential Resistance
Record Number:CaltechAUTHORS:20201111-190741605
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20201111-190741605
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:106632
Collection:CaltechAUTHORS
Deposited By: Rebecca Minjarez
Deposited On:12 Nov 2020 17:24
Last Modified:12 Nov 2020 17:24

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