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Improved electrical properties of wafer-bonded p-GaAs/n-InP interfaces with sulfide passivation

Nakayama, Keisuke and Tanabe, Katsuaki and Atwater, Harry A. (2008) Improved electrical properties of wafer-bonded p-GaAs/n-InP interfaces with sulfide passivation. Journal of Applied Physics, 103 (9). Art. No. 094503. ISSN 0021-8979. doi:10.1063/1.2912717.

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Sulfide-passivated GaAs and InP wafers were directly bonded to explore the efficiency of sulfide passivation on the bonded interfacial properties. We find that the bonded GaAs/InP interfaces after sulfide passivation contain sulfur atoms and a decreased amount of oxide species relative to the pairs bonded after conventional acid treatment; however, the residual sulfur atoms have no effect on the bonding strength. The electrical properties of the bonded p-GaAs/n-InP heterojunctions were studied for different acceptor concentrations in p-GaAs. A reduced interfacial trap state density enhances the tunnel current flow across the depletion layer in the sulfide-passivated case. A directly bonded tunnel diode with a heavily doped p-GaAs/n-InP heterojunction was achieved when the wafers were sulfide passivated and then bonded at temperatures as low as 300 °C. This sulfide-passivated tunnel diode can be used for fabrication of lattice-mismatched multijunction solar cells in which subcells are integrated via direct bonding.

Item Type:Article
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Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2008 American Institute of Physics. Received 10 December 2007; accepted 27 February 2008; published 2 May 2008. This work was supported by the National Renewable Energy Laboratory (NREL). We also acknowledge support from the Center for Science and Engineering of Materials (CSEM), a NSF Materials Research Science and Engineering Center at Caltech, for use of their facilities. Helpful discussions with M.J. Archer is gratefully acknowledged.
Funding AgencyGrant Number
National Renewable Energy LaboratoryUNSPECIFIED
Subject Keywords:gallium arsenide, III-V semiconductors, indium compounds, interface states, passivation, semiconductor heterojunctions, solar cells, tunnel diodes, wafer bonding
Issue or Number:9
Record Number:CaltechAUTHORS:NAKjap08
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10667
Deposited By: Archive Administrator
Deposited On:02 Jun 2008
Last Modified:08 Nov 2021 21:10

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