CaltechAUTHORS
  A Caltech Library Service

Improved electrical properties of wafer-bonded p-GaAs/n-InP interfaces with sulfide passivation

Nakayama, Keisuke and Tanabe, Katsuaki and Atwater, Harry A. (2008) Improved electrical properties of wafer-bonded p-GaAs/n-InP interfaces with sulfide passivation. Journal of Applied Physics, 103 (9). Art. No. 094503. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:NAKjap08

[img]
Preview
PDF
See Usage Policy.

415Kb

Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:NAKjap08

Abstract

Sulfide-passivated GaAs and InP wafers were directly bonded to explore the efficiency of sulfide passivation on the bonded interfacial properties. We find that the bonded GaAs/InP interfaces after sulfide passivation contain sulfur atoms and a decreased amount of oxide species relative to the pairs bonded after conventional acid treatment; however, the residual sulfur atoms have no effect on the bonding strength. The electrical properties of the bonded p-GaAs/n-InP heterojunctions were studied for different acceptor concentrations in p-GaAs. A reduced interfacial trap state density enhances the tunnel current flow across the depletion layer in the sulfide-passivated case. A directly bonded tunnel diode with a heavily doped p-GaAs/n-InP heterojunction was achieved when the wafers were sulfide passivated and then bonded at temperatures as low as 300 °C. This sulfide-passivated tunnel diode can be used for fabrication of lattice-mismatched multijunction solar cells in which subcells are integrated via direct bonding.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1063/1.2912717DOIUNSPECIFIED
ORCID:
AuthorORCID
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2008 American Institute of Physics. Received 10 December 2007; accepted 27 February 2008; published 2 May 2008. This work was supported by the National Renewable Energy Laboratory (NREL). We also acknowledge support from the Center for Science and Engineering of Materials (CSEM), a NSF Materials Research Science and Engineering Center at Caltech, for use of their facilities. Helpful discussions with M.J. Archer is gratefully acknowledged.
Funders:
Funding AgencyGrant Number
National Renewable Energy LaboratoryUNSPECIFIED
NSFUNSPECIFIED
Subject Keywords:gallium arsenide, III-V semiconductors, indium compounds, interface states, passivation, semiconductor heterojunctions, solar cells, tunnel diodes, wafer bonding
Issue or Number:9
Record Number:CaltechAUTHORS:NAKjap08
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:NAKjap08
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10667
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:02 Jun 2008
Last Modified:03 Oct 2019 00:11

Repository Staff Only: item control page