Nakayama, Keisuke and Tanabe, Katsuaki and Atwater, Harry A. (2008) Improved electrical properties of wafer-bonded p-GaAs/n-InP interfaces with sulfide passivation. Journal of Applied Physics, 103 (9). Art. No. 094503. ISSN 0021-8979. doi:10.1063/1.2912717. https://resolver.caltech.edu/CaltechAUTHORS:NAKjap08
![[img]](https://authors.library.caltech.edu/style/images/fileicons/application_pdf.png)
|
PDF
See Usage Policy. 425kB |
Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:NAKjap08
Abstract
Sulfide-passivated GaAs and InP wafers were directly bonded to explore the efficiency of sulfide passivation on the bonded interfacial properties. We find that the bonded GaAs/InP interfaces after sulfide passivation contain sulfur atoms and a decreased amount of oxide species relative to the pairs bonded after conventional acid treatment; however, the residual sulfur atoms have no effect on the bonding strength. The electrical properties of the bonded p-GaAs/n-InP heterojunctions were studied for different acceptor concentrations in p-GaAs. A reduced interfacial trap state density enhances the tunnel current flow across the depletion layer in the sulfide-passivated case. A directly bonded tunnel diode with a heavily doped p-GaAs/n-InP heterojunction was achieved when the wafers were sulfide passivated and then bonded at temperatures as low as 300 °C. This sulfide-passivated tunnel diode can be used for fabrication of lattice-mismatched multijunction solar cells in which subcells are integrated via direct bonding.
| Item Type: | Article | ||||||
|---|---|---|---|---|---|---|---|
| Related URLs: |
| ||||||
| ORCID: |
| ||||||
| Additional Information: | © 2008 American Institute of Physics. Received 10 December 2007; accepted 27 February 2008; published 2 May 2008. This work was supported by the National Renewable Energy Laboratory (NREL). We also acknowledge support from the Center for Science and Engineering of Materials (CSEM), a NSF Materials Research Science and Engineering Center at Caltech, for use of their facilities. Helpful discussions with M.J. Archer is gratefully acknowledged. | ||||||
| Funders: |
| ||||||
| Subject Keywords: | gallium arsenide, III-V semiconductors, indium compounds, interface states, passivation, semiconductor heterojunctions, solar cells, tunnel diodes, wafer bonding | ||||||
| Issue or Number: | 9 | ||||||
| DOI: | 10.1063/1.2912717 | ||||||
| Record Number: | CaltechAUTHORS:NAKjap08 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:NAKjap08 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 10667 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 02 Jun 2008 | ||||||
| Last Modified: | 08 Nov 2021 21:10 |
Repository Staff Only: item control page
