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Bistable injection lasers

Harder, Ch. and Lau, K. Y. and Yariv, A. (1984) Bistable injection lasers. In: Optical Bistability 2. Springer US , Boston, MA, pp. 311-316. ISBN 9781468447200. https://resolver.caltech.edu/CaltechAUTHORS:20201124-174614775

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Abstract

Semiconductor lasers with inhomogeneous current injection have been proposed nearly twenty years ago [1] as highly compact and efficient bistable devices. Recently, we demonstrated that a semiconductor laser with a segmented contact, as shown in Fig. 1, displays bistability without pulsations. The key to the proper design of such a bistable laser is the electrical isolation between the two segments which requires that the parasitic resistance (R_p in Fig. 2) between the two contacts be as large as possible. This can be achieved by doping the top cladding layer only slightly p-type.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1007/978-1-4684-4718-7_45DOIArticle
Additional Information:© Plenum Press, New York 1984. This research was supported by the Office of Naval Research, the National Science Foundation under the Optical Communication Program and by the Army Research Office.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
NSFUNSPECIFIED
Army Research Office (ARO)UNSPECIFIED
Subject Keywords:Semiconductor Laser, Current Voltage Characteristic, Saturable Absorber, Negative Differential Resistance, Pump Current
DOI:10.1007/978-1-4684-4718-7_45
Record Number:CaltechAUTHORS:20201124-174614775
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20201124-174614775
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:106819
Collection:CaltechAUTHORS
Deposited By: Rebecca Minjarez
Deposited On:03 Dec 2020 18:13
Last Modified:16 Nov 2021 18:57

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