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Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices

Koren, Uziel and Margalit, Shlomo and Chen, T. R. and Yu, K. L. and Yariv, Amnon and Bar-Chaim, Nadav and Lau, Kam Y. and Ury, Israel (1982) Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices. IEEE Journal of Quantum Electronics, 18 (10). pp. 1653-1662. ISSN 0018-9197.

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Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar transistors, and others on a single semiconductor crystal. Here we review some of the integrated circuits that have been realized and discuss the laser structures suited for integration with emphasis on the InGaAsP/InP material system. Some results of high frequency modulation and performance of integrated devices are discussed.

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Additional Information:© Copyright 1982 IEEE. Reprinted with permission. Manuscript received April 1, 1982; revised June 4, 1982. This work was supported in part by the Office of Naval Research and the National Science Foundation (Optical Communication Program).
Subject Keywords:Electrooptic devices; indium gallium arsenide phosphide; Integrated optics
Issue or Number:10
Record Number:CaltechAUTHORS:KORieeejqe82
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10737
Deposited By: Archive Administrator
Deposited On:05 Jun 2008
Last Modified:03 Oct 2019 00:12

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