Chiu, L. C. and Chen, P. C. and Yariv, Amnon (1982) Interband Auger recombination in InGaAsP. IEEE Journal of Quantum Electronics, 18 (6). pp. 938-941. ISSN 0018-9197. https://resolver.caltech.edu/CaltechAUTHORS:CHIieeejqe82b
![[img]](https://authors.library.caltech.edu/style/images/fileicons/application_pdf.png)
|
PDF
See Usage Policy. 363kB |
Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:CHIieeejqe82b
Abstract
The interband Auger recombination lifetimes of two Auger processes have been calculated to correlate measured threshold current densities and carrier lifetimes for InGaAsP and InGaAsSb lasers. Good aggreement with experimental data was obtained for lasers with low nominal threshold current densities. These results demonstrate the importance of Auger recombination in the threshold characteristics of InGaAsP/InP lasers.
| Item Type: | Article | ||||||
|---|---|---|---|---|---|---|---|
| Related URLs: |
| ||||||
| Additional Information: | © Copyright 1982 IEEE. Reprinted with permission. Manuscript received June 24, 1981. This work was supported by the National Science Foundation and the Office of Naval Research. | ||||||
| Issue or Number: | 6 | ||||||
| Record Number: | CaltechAUTHORS:CHIieeejqe82b | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:CHIieeejqe82b | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 10739 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 05 Jun 2008 | ||||||
| Last Modified: | 03 Oct 2019 00:12 |
Repository Staff Only: item control page
