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Interband Auger recombination in InGaAsP

Chiu, L. C. and Chen, P. C. and Yariv, Amnon (1982) Interband Auger recombination in InGaAsP. IEEE Journal of Quantum Electronics, 18 (6). pp. 938-941. ISSN 0018-9197.

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The interband Auger recombination lifetimes of two Auger processes have been calculated to correlate measured threshold current densities and carrier lifetimes for InGaAsP and InGaAsSb lasers. Good aggreement with experimental data was obtained for lasers with low nominal threshold current densities. These results demonstrate the importance of Auger recombination in the threshold characteristics of InGaAsP/InP lasers.

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Additional Information:© Copyright 1982 IEEE. Reprinted with permission. Manuscript received June 24, 1981. This work was supported by the National Science Foundation and the Office of Naval Research.
Issue or Number:6
Record Number:CaltechAUTHORS:CHIieeejqe82b
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10739
Deposited By: Archive Administrator
Deposited On:05 Jun 2008
Last Modified:03 Oct 2019 00:12

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