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Field and hot carrier enhanced leakage in InGaAsP/InP heterojunctions

Chiu, L. C. and Yu, K. L. and Margalit, S. and Chen, T. R. and Koren, U. and Hasson, A. and Yariv, Amnon (1983) Field and hot carrier enhanced leakage in InGaAsP/InP heterojunctions. IEEE Journal of Quantum Electronics, 19 (9). pp. 1335-1338. ISSN 0018-9197.

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A model calculation for the field and hot carrier enhanced electron leakage in InGaAsP/InP LED's and lasers is presented. The significant influence of the doping level in the P-InP confining layer on leakage current is confirmed.

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Additional Information:© Copyright 1983 IEEE. Reprinted with permission. Manuscript received December 16, 1982; revised April 5, 1983. This work was supported by the U.S. Office of Naval Research and the National Science Foundation.
Issue or Number:9
Record Number:CaltechAUTHORS:CHIieeejqe83
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10744
Deposited By: Archive Administrator
Deposited On:05 Jun 2008
Last Modified:03 Oct 2019 00:12

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