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Electrical characteristics of amorphous iron-tungsten contacts on silicon

Finetti, M. and Pan, E. T-S. and Suni, I. and Nicolet, M-A. (1983) Electrical characteristics of amorphous iron-tungsten contacts on silicon. Applied Physics Letters, 42 (11). pp. 987-989. ISSN 0003-6951. doi:10.1063/1.93824.

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The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities, pc=1×10^−7 and pc=2.8×10^−6, were measured on n+ and p+ silicon, respectively. These values remain constant after thermal treatment up to at least 500°C. A barrier height, φBn=0.61 V, was measured on n-type silicon.

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Additional Information:© 1983 American Institute of Physics. Received 4 February 1983; accepted 22 March 1983. The authors thank Bai-Xin Liu (Caltech) for the x-ray observations, D. Rutledge (Caltech) for the access to the photolithographic facilities, and P. Iles and F. Ho (Applied Solar Energy Corporation) for supplying some of the test wafers. This work originated as a project funded by the Caltech Summer Undergraduate Research Fellowship program (F. Shair, S.P. Krown, and C. Merkel); the completion of this work was financially supported in part by the U.S. Department of Energy through an agreement with the National Aeronautics and Space Administration and monitored by the Jet Propulsion Laboratory, California Institute of Technology (D.B. Bickler).
Issue or Number:11
Record Number:CaltechAUTHORS:FINapl83
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10750
Deposited By: Tony Diaz
Deposited On:06 Jun 2008
Last Modified:08 Nov 2021 21:10

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