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Damage-Free Atomic-Scale Etching and Surface Enhancements by Electron-Enhanced Reactions: Results and Simulations

Anz, Samir J. and Margolese, David I. and Sando, Stewart F. and Gillis, H. P. and Goddard, William A., III (2021) Damage-Free Atomic-Scale Etching and Surface Enhancements by Electron-Enhanced Reactions: Results and Simulations. In: Computational Materials, Chemistry, and Biochemistry: From Bold Initiatives to the Last Mile. Springer Series in Materials Science. No.284. Springer International Publishing , Cham, pp. 603-627. ISBN 978-3-030-18777-4.

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Ion-enhanced dry etch methods inflict “etch process damage” through surface ion bombardment. These inherent limitations in conventional dry etch methods create potential roadblocks to achieving device properties necessary for scaling below 10 nm. We describe an alternative dry etch method in which electrons with energies below about 100 eV stimulate precision etching of features as small as 5 nm without damage. This Low Energy Electron Enhanced Etching (LE4) method also gives atomically smooth etched surfaces, very high selectivity between materials, and maintains stoichiometry of compound materials. LE4 etches low K dielectric materials with no loss of carbon and gives Line Width Roughness (LWR) values dramatically smaller than achieved by ion-enhanced etching. In addition, LE4 is used to modify substrates in a variety of applications, like low-temperature surface cleaning and the modification of the surface architecture on multiple length scales for biotechnology applications. We have developed the electron force field (eFF) method to describe electron dynamics in highly excited electronic states and use it to show preferential bond breaking and product desorption after electronic excitation of the sample surface.

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Goddard, William A., III0000-0003-0097-5716
Additional Information:© Springer Nature Switzerland AG 2021. First Online: 26 January 2021. The authors are indebted to Keyvan Behnam, Ph.D. of Zimmer Biomet, Zyvex Labs, Plano TX, Department of Energy ARO and A2P projects.
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Series Name:Springer Series in Materials Science
Issue or Number:284
Record Number:CaltechAUTHORS:20210127-090228375
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:107768
Deposited By: Tony Diaz
Deposited On:27 Jan 2021 17:13
Last Modified:16 Nov 2021 19:06

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