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Single-Step Direct Growth of Graphene on Cu Ink toward Flexible Hybrid Electronic Applications by Plasma-Enhanced Chemical Vapor Deposition

Lu, Chen-Hsuan and Leu, Chyi-Ming and Yeh, Nai-Chang (2021) Single-Step Direct Growth of Graphene on Cu Ink toward Flexible Hybrid Electronic Applications by Plasma-Enhanced Chemical Vapor Deposition. ACS Applied Materials & Interfaces, 13 (5). pp. 6951-6959. ISSN 1944-8244. doi:10.1021/acsami.0c22207.

[img] PDF (Sample appearance before and after the PECVD process; I(2D)/I(G) ratio vs H2/CH4 ratio; HAADF–STEM images of the Cu ink before and after PECVD with intensity vs position plots; and derivation of the electron temperature dependence on total pressure) - Supplemental Material
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Highly customized and free-formed products in flexible hybrid electronics (FHE) require direct pattern creation such as inkjet printing (IJP) to accelerate product development. In this work, we demonstrate the direct growth of graphene on Cu ink deposited on polyimide (PI) by means of plasma-enhanced chemical vapor deposition (PECVD), which provides simultaneous reduction, sintering, and passivation of the Cu ink and further reduces its resistivity. We investigate the PECVD growth conditions for optimizing the graphene quality on Cu ink and find that the defect characteristics of graphene are sensitive to the H₂/CH₄ ratio at higher total gas pressure during the growth. The morphology of Cu ink after the PECVD process and the dependence of the graphene quality on the H₂/CH₄ ratio may be attributed to the difference in the corresponding electron temperature. Therefore, this study paves a new pathway toward efficient growth of high-quality graphene on Cu ink for applications in flexible electronics and Internet of Things (IoT).

Item Type:Article
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URLURL TypeDescription InCaltech News
Lu, Chen-Hsuan0000-0002-4802-1332
Yeh, Nai-Chang0000-0002-1826-419X
Additional Information:© 2021 The Authors. Published by American Chemical Society. Received: December 15, 2020; Accepted: January 19, 2021; Published: February 1, 2021. The authors acknowledge MMRC at Caltech for providing access to the AFM and Professor George Rossman for providing access to the Raman spectrometer. CHL thanks Wei-Hsiang Lin for helpful discussion on the Raman spectroscopic characterizations of graphene. The authors acknowledge MCL at ITRI for assisting the acquisition of HAADF–STEM images and XPS measurements and Chih-Cheng Lin for his assistance at ITRI. Author Contributions: The project was conceived jointly by C.-M.L. and N.-C.Y., and C.-H.L. carried out the PECVD graphene growth, Raman spectroscopic studies, SEM imaging, XPS analysis, and AFM measurements. N.-C.Y. coordinated and supervised the research activities at Caltech. C.-M.L. coordinated the research activities at ITRI and the collaboration with Caltech. All authors contributed to the writing of the manuscript and have given approval to the final version of the manuscript. The project was funded by the Industrial Technology Research Institute (ITRI) in Taiwan with award number NCY.PECVD-1-ITRI.SRA2020. The authors declare no competing financial interest.
Funding AgencyGrant Number
Industrial Technology Research InstituteNCY.PECVD-1-ITRI.SRA2020
Subject Keywords:Cu ink, PECVD, graphene, inkjet printing, low-temperature process
Issue or Number:5
Record Number:CaltechAUTHORS:20210203-071421044
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Official Citation:Single-Step Direct Growth of Graphene on Cu Ink toward Flexible Hybrid Electronic Applications by Plasma-Enhanced Chemical Vapor Deposition. Chen-Hsuan Lu, Chyi-Ming Leu, and Nai-Chang Yeh. ACS Applied Materials & Interfaces 2021 13 (5), 6951-6959; DOI: 10.1021/acsami.0c22207
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:107885
Deposited By: Tony Diaz
Deposited On:03 Feb 2021 16:51
Last Modified:28 Feb 2023 00:31

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