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Quantitative Charge Imaging of Silicon Nanocrystals by Atomic Force Microscopy

Feng, Tao and Atwater, Harry A. (2002) Quantitative Charge Imaging of Silicon Nanocrystals by Atomic Force Microscopy. Materials Research Society symposia proceedings, 737 (1). Art. No. 17. ISSN 0272-9172. doi:10.1557/proc-737-f1.7.

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Quantitative understanding of charging and discharging of Si nanocrystals in SiO2 films on Si substrate is essential to their application in floating gate nonvolatile memory devices. Charge imaging by atomic force microscopy (AFM) or electrostatic force microscopy (EFM) can provide qualitative information on such system, while a further step is needed. We have developed a generalized method of images, which can solve Poisson equation for multiple dielectric layers, to simulate the charge imaging of Si nanocrystals by non-contact mode AFM under different sample geometries. Simulated images can be compared with experimental images thoroughly to estimate the total amount and distributions of trapped charges, which is also useful in the study of time evolution of charges or dissipation problems.

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Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2002 Materials Research Society. The research described in this article was sponsored by the National Aeronautics and Space Administration (NASA), and by the National Science Foundation.
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Issue or Number:1
Record Number:CaltechAUTHORS:20210224-143750835
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Official Citation:Feng, T., Atwater, H.A. Quantitative Charge Imaging of Silicon Nanocrystals by Atomic Force Microscopy. MRS Online Proceedings Library 737, 17 (2002).
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:108179
Deposited By: Tony Diaz
Deposited On:24 Feb 2021 22:47
Last Modified:16 Nov 2021 19:09

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