Yust, M. and Bar-Chaim, N. and Izadpanah, S. H. and Margalit, S. and Ury, I. and Wilt, D. and Yariv, A. (1979) A monolithically integrated optical repeater. Applied Physics Letters, 35 (10). pp. 795-797. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:YUSapl79
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Abstract
A monolithically integrated optical repeater has been fabricated on a single-crystal semi-insulating GaAs substrate. The repeater consists of an optical detector, an electronic amplifier, and a double heterostructure crowding effect laser. The repeater makes use of three metal semiconductor field effect transistors, one of which is used as the optical detector. With light from an external GaAlAs laser incident on the detector, an overall optical power gain of 10 dB from both laser facets was obtained.
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright © 1979 American Institute of Physics. (Received 13 August 1979; accepted for publication 11 September 1979) This work was supported by the Office of Naval Research and the National Science Foundation. The work of one of the authors (SHI) was supported by the Iran Ministry of Higher Education. |
| Subject Keywords: | OPTICAL EQUIPMENT, AMPLIFIERS, FABRICATION, MONOCRYSTALS, GALLIUM ARSENIDES, SUBSTRATES, RADIATION DETECTORS, CRYSTAL STRUCTURE, FIELD EFFECT TRANSISTORS, SEMICONDUCTOR LASERS, ALUMINIUM COMPOUNDS, GAIN |
| Issue or Number: | 10 |
| Record Number: | CaltechAUTHORS:YUSapl79 |
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:YUSapl79 |
| Alternative URL: | http://dx.doi.org/10.1063/1.90939 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 10825 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 12 Jun 2008 |
| Last Modified: | 03 Oct 2019 00:13 |
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