Published November 1986
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Journal Article
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Reaction of thin metal films with crystalline and amorphous Al2O3
- Creators
- Zhao, X.-A.
- Kolawa, E.
- Nicolet, M-A.
Abstract
We have investigated the thermal reaction between thin transition metal films and sapphire, alumina or amorphous Al2O3 using backscattering spectrometry and x-ray diffraction. Thin films of Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, and Pt were deposited on the substrates by rf sputtering in an Ar gas ambient. The samples were subsequently annealed in vacuum at 800–900 °C for 20 min to 4 h duration. We found that only films of Y, Ti, and Hf react, regardless of the type of substrate, by forming aluminides near the substrate and oxides on the surface. The other metal films do not react with the Al2O3 substrates. Our results agree with thermodynamic consideration based on the heats of reactions between metals and Al2O3.
Additional Information
© 1986 American Vacuum Society. (Received 11 April 1986; accepted 30 May 1986) We wish to thank T.C. Banwell for his helpful discussion and the deposited Al2O3 samples which were provided by T.M. Reith (IBM/GPD, Tucso), and A. Collinwood for typing the manuscript. This work was financially supported in part by the Army Research Office under contract No. DAAG29-85-K-0l92 and by the Office of Naval Research under contract No. N00014-84-K-0275.Files
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- Eprint ID
- 10832
- Resolver ID
- CaltechAUTHORS:ZHAjvsta86
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2008-06-12Created from EPrint's datestamp field
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