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Thermal stability of titanium nitride for shallow junction solar cell contacts

Cheung, N. W. and von Seefeld, H. and Nicolet, M-A. and Ho, F. and Iles, P. (1981) Thermal stability of titanium nitride for shallow junction solar cell contacts. Journal of Applied Physics, 52 (6). pp. 4297-4299. ISSN 0021-8979.

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To demonstrate the thermal stability of titanium nitride as a high-temperature diffusion barrier, the TiN-Ti-Ag metallization scheme has been tested on shallow-junction (~2000 Å) Si solar cells. Electrical measurements on reference samples with the Ti-Ag metallization scheme show serious degradation after a 600 °C, 10-min annealing. With the TiN-Ti-Ag scheme, no degradation of cell performance is observed after the same heat treatment if the TiN layer is >~1700 Å. The glass encapsulation of cells by electrostatic bonding requires such a heat treatment.

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Additional Information:© 1981 American Institute of Physics. (Received 18 September 1980; accepted for publication 1 March 1981) At Caltech, this work was supported in part by the Department of Energy and monitored by Sandia Laboratories, Albuquerque, New Mexico (H.T. Weaver and M.B. Chamberlain).
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Department of Energy (DOE)UNSPECIFIED
Subject Keywords:electric contacts, stability, temperature effects, titanium nitrides, junctions, solar cells, thickness, diffusion, heat treatments, silver, metallization, experimental data, electrical properties, thermal degradation, high temperature, annealing, glass, encapsulation, bonding
Issue or Number:6
Record Number:CaltechAUTHORS:CHEjap81
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10874
Deposited By: Archive Administrator
Deposited On:14 Jun 2008
Last Modified:12 Dec 2019 17:07

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