Chen, T. R. and Yu, K. L. and Koren, U. and Hasson, A. and Margalit, S. and Yariv, A. (1982) Mode stabilized terrace InGaAsP lasers on semi-insulating InP. Journal of Applied Physics, 53 (11). pp. 7215-7217. ISSN 0021-8979. doi:10.1063/1.331618. https://resolver.caltech.edu/CaltechAUTHORS:CHEjap82
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Abstract
Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The fabrication involves a selective, single-step liquid phase epitaxial growth process, and a lateral Zn diffusion. Two versions of the terrace lasers are fabricated, and threshold currents as low as 35 mA and 50 mA respectively are obtained. The lasers operate with a stable single lateral mode. High power performance is observed. These lasers are suitable for monolithic integration with other optoelectronic devices.
| Item Type: | Article | ||||||
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| Additional Information: | Copyright © 1982 American Institute of Physics. Received 26 April 1982; accepted 2 August 1982. This work is supported by the Office of Naval Research and the National Science Foundation (Optical Communication Program). | ||||||
| Subject Keywords: | semiconductor lasers, oscillation modes, stabilization, configuration, indium arsenides, gallium arsenides, indium phosphides, gallium phosphides, fabrication, epitaxy, crystal growth, zinc, diffusion, threshold current, orientation, experimental data, integrated circuits | ||||||
| Issue or Number: | 11 | ||||||
| DOI: | 10.1063/1.331618 | ||||||
| Record Number: | CaltechAUTHORS:CHEjap82 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:CHEjap82 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 10875 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 14 Jun 2008 | ||||||
| Last Modified: | 08 Nov 2021 21:11 |
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