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Mode stabilized terrace InGaAsP lasers on semi-insulating InP

Chen, T. R. and Yu, K. L. and Koren, U. and Hasson, A. and Margalit, S. and Yariv, A. (1982) Mode stabilized terrace InGaAsP lasers on semi-insulating InP. Journal of Applied Physics, 53 (11). pp. 7215-7217. ISSN 0021-8979. doi:10.1063/1.331618.

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Mode stabilized terrace InGaAsP lasers have been fabricated on semi-insulating InP substrates. The fabrication involves a selective, single-step liquid phase epitaxial growth process, and a lateral Zn diffusion. Two versions of the terrace lasers are fabricated, and threshold currents as low as 35 mA and 50 mA respectively are obtained. The lasers operate with a stable single lateral mode. High power performance is observed. These lasers are suitable for monolithic integration with other optoelectronic devices.

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Additional Information:Copyright © 1982 American Institute of Physics. Received 26 April 1982; accepted 2 August 1982. This work is supported by the Office of Naval Research and the National Science Foundation (Optical Communication Program).
Subject Keywords:semiconductor lasers, oscillation modes, stabilization, configuration, indium arsenides, gallium arsenides, indium phosphides, gallium phosphides, fabrication, epitaxy, crystal growth, zinc, diffusion, threshold current, orientation, experimental data, integrated circuits
Issue or Number:11
Record Number:CaltechAUTHORS:CHEjap82
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10875
Deposited By: Archive Administrator
Deposited On:14 Jun 2008
Last Modified:08 Nov 2021 21:11

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