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Study and application of the mass transport phenomenon in InP

Chen, T. R. and Chiu, L. C. and Hasson, A. and Yu, K. L. and Koren, U. and Margalit, S. and Yariv, A. (1983) Study and application of the mass transport phenomenon in InP. Journal of Applied Physics, 54 (5). pp. 2407-2412. ISSN 0021-8979. doi:10.1063/1.332355.

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A study of the mass transport phenomenon in InP is presented. Conditions and possible explanation for the transport process are discussed. Characteristics of the mass transported InP homojunctions are described and compared with those in the InP–InGaAsP heterojunctions. Effects of the mass transported junction on laser performance are discussed.

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Additional Information:Copyright © 1983 American Institute of Physics. Received 2 November 1982; accepted 25 January 1983. This work is supported by the National Science Foundation and the Air Force Office of Scientific Research.
Subject Keywords:indium phosphides, mass transfer, experimental data, mathematical models, semiconductor junctions, gallium arsenides, gallium phosphides, indium arsenides, semiconductor lasers, performance
Issue or Number:5
Record Number:CaltechAUTHORS:CHEjap83
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10876
Deposited By: Archive Administrator
Deposited On:14 Jun 2008
Last Modified:08 Nov 2021 21:11

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