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HgTe/CdTe heterojunctions: A lattice-matched Schottky barrier structure

Kuech, T. F. and McCaldin, J. O. (1982) HgTe/CdTe heterojunctions: A lattice-matched Schottky barrier structure. Journal of Applied Physics, 53 (4). pp. 3121-3128. ISSN 0021-8979. doi:10.1063/1.331008.

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HgTe-CdTe lattice-matched heterojunctions were formed by the epitaxial growth of HgTe on CdTe substrates using a low-temperature metal organic chemical vapor deposition technique. These heterojunctions combine features of the Schottky barrier structure, due to the high carrier concentrations found in the semimetallic HgTe, with the structural perfection present in a lattice-matched heterojunction. The measured Schottky barrier height varied from 0.65 to 0.92 eV depending on the details of the heterojunction growth procedure used. This dependence may be due to the formation of an inversion layer in the CdTe at the interface. Presence of such an inversion layer suggests that the valence band discontinuity between HgTe and CdTe is small, in agreement with previous theoretical estimates.

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Additional Information:© 1982 American Institute of Physics. Received 4 September 1981; accepted for publication 17 December 1981. The authors wish to thank the Office of Naval Research (L.R. Cooper) and the Defense Advanced Research Projects Agency (R. Reynolds) for support of the work. The authors would also like to thank T.C. McGill and Reuben Collins for the many discussions.
Issue or Number:4
Record Number:CaltechAUTHORS:KUEjap82
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10922
Deposited By: Tony Diaz
Deposited On:19 Jun 2008
Last Modified:08 Nov 2021 21:12

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