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Quasiballistic electron transport in cryogenic SiGe HBTs studied using an exact, semi-analytic solution to the Boltzmann equation

Naik, Nachiket R. and Minnich, Austin J. (2021) Quasiballistic electron transport in cryogenic SiGe HBTs studied using an exact, semi-analytic solution to the Boltzmann equation. Journal of Applied Physics, 130 (17). Art. No. 174504. ISSN 0021-8979. doi:10.1063/5.0063178. https://resolver.caltech.edu/CaltechAUTHORS:20210713-213714240

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Abstract

Silicon–germanium heterojunction bipolar transistors (HBTs) are of interest as low-noise microwave amplifiers due to their competitive noise performance and low cost relative to III–V devices. The fundamental noise performance limits of HBTs are thus of interest, and several studies report that quasiballistic electron transport across the base is a mechanism leading to cryogenic non-ideal IV characteristics that affect these limits. However, this conclusion has not been rigorously tested against theoretical predictions because prior studies modeled electron transport with empirical approaches or approximate solutions of the Boltzmann equation. Here, we study non-diffusive transport in narrow-base SiGe HBTs using an exact, semi-analytic solution of the Boltzmann equation based on an asymptotic expansion approach. We find that the computed transport characteristics are inconsistent with experiments, implying that quasiballistic electron transport is unlikely to be the origin of cryogenic non-ideal IV characteristics. Our work helps to identify the mechanisms governing the lower limits of the microwave noise figure of cryogenic HBT amplifiers.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1063/5.0063178DOIArticle
https://arxiv.org/abs/2106.05374arXivDiscussion Paper
ORCID:
AuthorORCID
Naik, Nachiket R.0000-0001-8271-643X
Minnich, Austin J.0000-0002-9671-9540
Additional Information:© 2021 Published under an exclusive license by AIP Publishing. Submitted: 12 July 2021; Accepted: 29 September 2021; Published Online: 1 November 2021. The authors thank Mark Lundstrom, J. P. Peraud, and Nicolas Hadjiconstantinou for useful discussions. This work was supported by the National Science Foundation (NSF) (Award No. 1911926). The authors have no conflicts to disclose. Data Availability: The data that support the findings of this study are available from the corresponding author upon reasonable request.
Funders:
Funding AgencyGrant Number
NSFECCS-1911926
Issue or Number:17
DOI:10.1063/5.0063178
Record Number:CaltechAUTHORS:20210713-213714240
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20210713-213714240
Official Citation:Nachiket R. Naik and Austin J. Minnich , "Quasiballistic electron transport in cryogenic SiGe HBTs studied using an exact, semi-analytic solution to the Boltzmann equation", Journal of Applied Physics 130, 174504 (2021) https://doi.org/10.1063/5.0063178
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:109794
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:13 Jul 2021 22:03
Last Modified:03 Nov 2021 19:16

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