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Graphene Photo Memtransistor Based on CMOS Flash Memory Technology with Neuromorphic Applications

Frydendahl, Christian and Indukuri, S. R. K. Chaitanya and Grajower, Meir and Mazurski, Noa and Shappir, Joseph and Levy, Uriel (2021) Graphene Photo Memtransistor Based on CMOS Flash Memory Technology with Neuromorphic Applications. ACS Photonics, 8 (9). pp. 2659-2665. ISSN 2330-4022. doi:10.1021/acsphotonics.1c00664.

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Graphene holds a great promise for a number of diverse future applications, in particular, related to its easily tunable doping and Fermi level by electrostatic gating. However, as of today, most implementations rely on electrical doping via the application of continuous large voltages to maintain the desired doping. We show here how graphene can be implemented with conventional semiconductor flash memory technology in order to make programmable doping possible, simply by the application of short gate pulses. We also demonstrate how this approach can be used for a nonvolatile memory device and also show potential neuromorphic capabilities of the device. Finally, we show that the overall performance can be significantly enhanced by illuminating the device with UV radiation. Our approach may pave the way for integrating graphene in CMOS technology memory applications, and our device design could also be suitable for large-scale neuromorphic computing structures.

Item Type:Article
Related URLs:
URLURL TypeDescription
Frydendahl, Christian0000-0003-4734-9923
Indukuri, S. R. K. Chaitanya0000-0003-3956-6151
Levy, Uriel0000-0002-5918-1876
Additional Information:© 2021 American Chemical Society. Received: May 3, 2021; Published: July 14, 2021. We acknowledge funding from the Israeli Ministry of Science and Technology and The Air Force Office of Scientific Research. C.F. is supported by the Carlsberg Foundation as an Internationalisation Fellow. The authors would like to thank Dr. Devidas Taget Raghavendran, Ayelet Zalic and Prof. Hadar Steinberg from the Racah institute of Physics at HUJI. We also acknowledge Atzmon Vakahi and Dr. Sergei Remennik from Harvey M. Kruger Family Center of Nanoscience and Technology for assistance with the STEM imaging and FIB sample preparation. The authors declare no competing financial interest.
Funding AgencyGrant Number
Ministry of Science and Technology (Israel)UNSPECIFIED
Air Force Office of Scientific Research (AFOSR)UNSPECIFIED
Carlsberg FoundationUNSPECIFIED
Subject Keywords:flash memory, charge trapping, electron tunneling, graphene, neuromorphic, ultraviolet light
Issue or Number:9
Record Number:CaltechAUTHORS:20210726-213114220
Persistent URL:
Official Citation:Graphene Photo Memtransistor Based on CMOS Flash Memory Technology with Neuromorphic Applications. Christian Frydendahl, S. R. K. Chaitanya Indukuri, Meir Grajower, Noa Mazurski, Joseph Shappir, and Uriel Levy. ACS Photonics 2021 8 (9), 2659-2665; DOI: 10.1021/acsphotonics.1c00664
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:110015
Deposited By: Tony Diaz
Deposited On:26 Jul 2021 22:49
Last Modified:28 Sep 2021 17:50

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