Harder, Ch. and Lau, K. Y. and Yariv, A. (1982) Bistability and negative resistance in semiconductor lasers. Applied Physics Letters, 40 (2). pp. 124-126. ISSN 0003-6951. doi:10.1063/1.93010. https://resolver.caltech.edu/CaltechAUTHORS:HARapl82
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Abstract
Experimental results of a buried heterostructure laser with a segmented contact to achieve inhomogeneous gain are presented. Measurements reveal a negative differential resistance over the absorbing section. Depending on the source impedance of the dc current source driving the absorbing section, this negative resistance can lead to (i) bistability with a very large hysteresis in the light-current characteristic without self-pulsation or (ii) a small hysteresis with self-pulsations at microwave frequencies. An analysis, which includes the electrical part of the device, leads to an explanation of self-pulsations in inhomogeneously pumped lasers without having to rely on a sublinear gain dependence on injected carrier concentration.
Item Type: | Article | ||||||
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Additional Information: | Copyright © 1982 American Institute of Physics. (Received 8 September 1981; accepted for publication 3 November 1981) This research was supported by the Office of Naval Research, the National Science Foundation under the Optical Communication Program, and by the Army Research Office. | ||||||
Subject Keywords: | SEMICONDUCTOR LASERS, STABILITY, DATA, HETEROJUNCTIONS, ELECTRIC CONTACTS, GAIN, ELECTRIC IMPEDANCE, DIRECT CURRENT, HYSTERESIS, MICROWAVE RADIATION, PULSATIONS, MATHEMATICAL MODELS, CARRIER DENSITY | ||||||
Issue or Number: | 2 | ||||||
DOI: | 10.1063/1.93010 | ||||||
Record Number: | CaltechAUTHORS:HARapl82 | ||||||
Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:HARapl82 | ||||||
Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
ID Code: | 11018 | ||||||
Collection: | CaltechAUTHORS | ||||||
Deposited By: | Archive Administrator | ||||||
Deposited On: | 23 Jun 2008 | ||||||
Last Modified: | 08 Nov 2021 21:13 |
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