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Bistability and negative resistance in semiconductor lasers

Harder, Ch. and Lau, K. Y. and Yariv, A. (1982) Bistability and negative resistance in semiconductor lasers. Applied Physics Letters, 40 (2). pp. 124-126. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:HARapl82

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Abstract

Experimental results of a buried heterostructure laser with a segmented contact to achieve inhomogeneous gain are presented. Measurements reveal a negative differential resistance over the absorbing section. Depending on the source impedance of the dc current source driving the absorbing section, this negative resistance can lead to (i) bistability with a very large hysteresis in the light-current characteristic without self-pulsation or (ii) a small hysteresis with self-pulsations at microwave frequencies. An analysis, which includes the electrical part of the device, leads to an explanation of self-pulsations in inhomogeneously pumped lasers without having to rely on a sublinear gain dependence on injected carrier concentration.


Item Type:Article
Additional Information:Copyright © 1982 American Institute of Physics. (Received 8 September 1981; accepted for publication 3 November 1981) This research was supported by the Office of Naval Research, the National Science Foundation under the Optical Communication Program, and by the Army Research Office.
Subject Keywords:SEMICONDUCTOR LASERS, STABILITY, DATA, HETEROJUNCTIONS, ELECTRIC CONTACTS, GAIN, ELECTRIC IMPEDANCE, DIRECT CURRENT, HYSTERESIS, MICROWAVE RADIATION, PULSATIONS, MATHEMATICAL MODELS, CARRIER DENSITY
Record Number:CaltechAUTHORS:HARapl82
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:HARapl82
Alternative URL:http://dx.doi.org/10.1063/1.93010
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:11018
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:23 Jun 2008
Last Modified:26 Dec 2012 10:07

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